Data Sheet10V Drive Nch MOSFET R6018ANJ Structure Dimensions (Unit : mm)Silicon N-channel MOSFETLPTS10.1 4.51.3Features1.241) Low on-resistance.2) High-speed switching.2.54 0.40.783) Wide SOA.2.75.08(1) Gate(1) (2) (3)4) Drive circuits can be simple. (2) Drain(3) Source5) Parallel use is easy. ApplicationSwitching Packaging specifi

R6018ANXNch 600V 18A Power MOSFET DatasheetOutlineVDSS600V TO-220FMRDS(on) (Max.)0.27ID18APD50W(1)(2)(3) Features Inner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple.*1 Body Diode 5) Parallel use is easy.6) Pb-free lead

R6018JNXDatasheetNch 600V 18A Power MOSFETlOutlinel TO-220FMVDSS600VRDS(on)(Max.)0.286ID18APD72W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationll

isc N-Channel MOSFET Transistor R6018JNXFEATURESDrain Current I = 18A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 286m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo