R8002ANX MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Data Sheet10V Drive Nch MOSFET R8002ANX Structure Dimensions (Unit : mm)TO-220FMSilicon N-channel MOSFET10.0 3.2 4.52.8Features1.21) Low on-resistance.1.32) Low input capacitance.0.83) High ESD.(1) Gate2.54 2.54 0.75 2.6(2) Drain(1) (2) (3)(3) Source ApplicationSwitching Packaging specifications Inner circuitPackage BulkType

isc N-Channel MOSFET Transistor R8002ANXFEATURESDrain Current I = 2A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R = 4.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

R8002ANJDatasheetNch 800V 2A Power MOSFETlOutlinel TO-263SVDSS 800V SC-83RDS(on)(Max.) 4.3 LPT(S)ID 2APD 62W lInner circuitllFeaturesl1) Low on-resistance.2) Fast switching speed.3) Parallel use is easy.4) Pb-free plating ; RoHS compliantlPackaging specificationslEmbossed PackingTape Reel size

isc N-Channel MOSFET Transistor R8002ANJFEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R = 4.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos