R8002ANX Todos los transistores

 ..1. Size:1191K  rohm
 r8002anx.pdf

Data Sheet 10V Drive Nch MOSFET R8002ANX Structure Dimensions (Unit mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 Features 1.2 1) Low on-resistance. 1.3 2) Low input capacitance. 0.8 3) High ESD. (1) Gate 2.54 2.54 0.75 2.6 (2) Drain (1) (2) (3) (3) Source Application Switching Packaging specifications Inner circuit Package Bulk Type

 ..2. Size:251K  inchange semiconductor
 r8002anx.pdf

isc N-Channel MOSFET Transistor R8002ANX FEATURES Drain Current I = 2A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R = 4.3 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 7.1. Size:1546K  rohm
 r8002anj.pdf

R8002ANJ Datasheet Nch 800V 2A Power MOSFET lOutline l TO-263S VDSS 800V SC-83 RDS(on)(Max.) 4.3 LPT(S) ID 2A PD 62W lInner circuit l lFeatures l 1) Low on-resistance. 2) Fast switching speed. 3) Parallel use is easy. 4) Pb-free plating ; RoHS compliant lPackaging specifications l Embossed Packing Tape Reel size

 7.2. Size:254K  inchange semiconductor
 r8002anj.pdf

isc N-Channel MOSFET Transistor R8002ANJ FEATURES Drain Current I = 24A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R = 4.3 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos