R8002ANX Specs and Replacement

Type Designator: R8002ANX

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.3 Ohm

Package: TO220FM

R8002ANX substitution

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R8002ANX datasheet

 ..1. Size:1191K  rohm
r8002anx.pdf pdf_icon

R8002ANX

Data Sheet 10V Drive Nch MOSFET R8002ANX Structure Dimensions (Unit mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 Features 1.2 1) Low on-resistance. 1.3 2) Low input capacitance. 0.8 3) High ESD. (1) Gate 2.54 2.54 0.75 2.6 (2) Drain (1) (2) (3) (3) Source Application Switching Packaging specifications Inner circuit Package Bulk Type ... See More ⇒

 ..2. Size:251K  inchange semiconductor
r8002anx.pdf pdf_icon

R8002ANX

isc N-Channel MOSFET Transistor R8002ANX FEATURES Drain Current I = 2A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R = 4.3 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose... See More ⇒

 7.1. Size:1546K  rohm
r8002anj.pdf pdf_icon

R8002ANX

R8002ANJ Datasheet Nch 800V 2A Power MOSFET lOutline l TO-263S VDSS 800V SC-83 RDS(on)(Max.) 4.3 LPT(S) ID 2A PD 62W lInner circuit l lFeatures l 1) Low on-resistance. 2) Fast switching speed. 3) Parallel use is easy. 4) Pb-free plating ; RoHS compliant lPackaging specifications l Embossed Packing Tape Reel size ... See More ⇒

 7.2. Size:254K  inchange semiconductor
r8002anj.pdf pdf_icon

R8002ANX

isc N-Channel MOSFET Transistor R8002ANJ FEATURES Drain Current I = 24A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R = 4.3 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒

Detailed specifications: R6018ANX, R6020ANJ, R6020ANX, R6020ANZ, R6020FNX, R6025ANZ, R6046ANZ, R6046FNZ, AON6380, R8008ANX, RAF040P01, RAL025P01, RAL035P01, RAL045P01, RAQ045P01, RCD040N25, RCD050N20

Keywords - R8002ANX MOSFET specs

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