R8008ANX Todos los transistores

 ..1. Size:1169K  rohm
 r8008anx.pdf

Data Sheet 10V Drive Nch MOSFET R8008ANX Structure Dimensions (Unit mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 Features 1.2 1) Low on-resistance. 1.3 2) Low input capacitance. 0.8 3) High ESD. (1) Gate (2) Drain 2.54 2.54 0.75 2.6 (1) (2) (3) (3) Source Application Switching Packaging specifications Inner circuit Package Bulk Type

 ..2. Size:252K  inchange semiconductor
 r8008anx.pdf

isc N-Channel MOSFET Transistor R8008ANX FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R = 1.03 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 7.1. Size:1750K  rohm
 r8008anj.pdf

R8008ANJ Datasheet Nch 800V 8A Power MOSFET lOutline l TO-263S VDSS 800V SC-83 RDS(on)(Max.) 1.03 LPT(S) ID 8A PD 195W lInner circuit l lFeatures l 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-

 7.2. Size:255K  inchange semiconductor
 r8008anj.pdf

isc N-Channel MOSFET Transistor R8008ANJ FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R = 1.03 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos