R8008ANX - параметры транзистора MOSFET, его аналоги, datasheet

R8008ANX Datasheet (PDF)

..1. Size:1169K rohm
r8008anx.pdf pdf_icon

Data Sheet10V Drive Nch MOSFET R8008ANX Structure Dimensions (Unit : mm)TO-220FMSilicon N-channel MOSFET10.0 3.2 4.52.8Features1.21) Low on-resistance.1.32) Low input capacitance.0.83) High ESD. (1) Gate(2) Drain2.54 2.54 0.75 2.6(1) (2) (3)(3) Source ApplicationSwitching Packaging specifications Inner circuitPackage BulkType

..2. Size:252K inchange semiconductor
r8008anx.pdf pdf_icon

isc N-Channel MOSFET Transistor R8008ANXFEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R = 1.03(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

7.1. Size:1750K rohm
r8008anj.pdf pdf_icon

R8008ANJDatasheetNch 800V 8A Power MOSFETlOutlinel TO-263SVDSS 800V SC-83RDS(on)(Max.) 1.03 LPT(S)ID 8APD 195W lInner circuitllFeaturesl1) Low on-resistance.2) Fast switching speed.3) Gate-source voltage (VGSS) guaranteedto be 30V.4) Drive circuits can be simple.5) Parallel use is easy.6) Pb-

7.2. Size:255K inchange semiconductor
r8008anj.pdf pdf_icon

isc N-Channel MOSFET Transistor R8008ANJFEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R = 1.03(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

Другие MOSFET... R6020ANJ , R6020ANX , R6020ANZ , R6020FNX , R6025ANZ , R6046ANZ , R6046FNZ , R8002ANX , AO4407 , RAF040P01 , RAL025P01 , RAL035P01 , RAL045P01 , RAQ045P01 , RCD040N25 , RCD050N20 , RCD060N25 .