All MOSFET. R8008ANX Datasheet

 

R8008ANX MOSFET. Datasheet pdf. Equivalent

Type Designator: R8008ANX

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 39 nC

Rise Time (tr): 50 nS

Drain-Source Capacitance (Cd): 480 pF

Maximum Drain-Source On-State Resistance (Rds): 0.79 Ohm

Package: TO220FM

R8008ANX Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

R8008ANX Datasheet (PDF)

1.1. r8008anx.pdf Size:1169K _rohm

R8008ANX
R8008ANX

Data Sheet 10V Drive Nch MOSFET R8008ANX ? Structure ? Dimensions (Unit : mm) TO-220FM Silicon N-channel MOSFET 10.0 ?3.2 4.5 2.8 ?Features 1.2 1) Low on-resistance. 1.3 2) Low input capacitance. 0.8 3) High ESD. (1) Gate (2) Drain 2.54 2.54 0.75 2.6 (1) (2) (3) (3) Source ? Application Switching ? Packaging specifications ? Inner circuit Package Bulk Type Code - ?1 Bas

Datasheet: R6020ANJ , R6020ANX , R6020ANZ , R6020FNX , R6025ANZ , R6046ANZ , R6046FNZ , R8002ANX , STP75NF75 , RAF040P01 , RAL025P01 , RAL035P01 , RAL045P01 , RAQ045P01 , RCD040N25 , RCD050N20 , RCD060N25 .

 
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