R8008ANX MOSFET. Datasheet pdf. Equivalent
Type Designator: R8008ANX
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 50 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 8 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 39 nC
Rise Time (tr): 50 nS
Drain-Source Capacitance (Cd): 480 pF
Maximum Drain-Source On-State Resistance (Rds): 0.79 Ohm
Package: TO220FM
R8008ANX Transistor Equivalent Substitute - MOSFET Cross-Reference Search
R8008ANX Datasheet (PDF)
1.1. r8008anx.pdf 
Size:1169K _rohm
Data Sheet 10V Drive Nch MOSFET R8008ANX ? Structure ? Dimensions (Unit : mm) TO-220FM Silicon N-channel MOSFET 10.0 ?3.2 4.5 2.8 ?Features 1.2 1) Low on-resistance. 1.3 2) Low input capacitance. 0.8 3) High ESD. (1) Gate (2) Drain 2.54 2.54 0.75 2.6 (1) (2) (3) (3) Source ? Application Switching ? Packaging specifications ? Inner circuit Package Bulk Type Code - ?1 Bas
Datasheet: R6020ANJ , R6020ANX , R6020ANZ , R6020FNX , R6025ANZ , R6046ANZ , R6046FNZ , R8002ANX , STP75NF75 , RAF040P01 , RAL025P01 , RAL035P01 , RAL045P01 , RAQ045P01 , RCD040N25 , RCD050N20 , RCD060N25 .
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