R8008ANX Specs and Replacement

Type Designator: R8008ANX

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 480 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.79 Ohm

Package: TO220FM

R8008ANX substitution

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R8008ANX datasheet

 ..1. Size:1169K  rohm
r8008anx.pdf pdf_icon

R8008ANX

Data Sheet 10V Drive Nch MOSFET R8008ANX Structure Dimensions (Unit mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 Features 1.2 1) Low on-resistance. 1.3 2) Low input capacitance. 0.8 3) High ESD. (1) Gate (2) Drain 2.54 2.54 0.75 2.6 (1) (2) (3) (3) Source Application Switching Packaging specifications Inner circuit Package Bulk Type ... See More ⇒

 ..2. Size:252K  inchange semiconductor
r8008anx.pdf pdf_icon

R8008ANX

isc N-Channel MOSFET Transistor R8008ANX FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R = 1.03 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒

 7.1. Size:1750K  rohm
r8008anj.pdf pdf_icon

R8008ANX

R8008ANJ Datasheet Nch 800V 8A Power MOSFET lOutline l TO-263S VDSS 800V SC-83 RDS(on)(Max.) 1.03 LPT(S) ID 8A PD 195W lInner circuit l lFeatures l 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-... See More ⇒

 7.2. Size:255K  inchange semiconductor
r8008anj.pdf pdf_icon

R8008ANX

isc N-Channel MOSFET Transistor R8008ANJ FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R = 1.03 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒

Detailed specifications: R6020ANJ, R6020ANX, R6020ANZ, R6020FNX, R6025ANZ, R6046ANZ, R6046FNZ, R8002ANX, IRF530, RAF040P01, RAL025P01, RAL035P01, RAL045P01, RAQ045P01, RCD040N25, RCD050N20, RCD060N25

Keywords - R8008ANX MOSFET specs

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