RCX120N20 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: RCX120N20
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 33 nS
   Cossⓘ - Capacitancia de salida: 57 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.25 Ohm
   Paquete / Cubierta: TO220FM

Búsqueda de reemplazo de MOSFET RCX120N20

RCX120N20 Datasheet (PDF)

..1. Size:1180K rohm
rcx120n20.pdf

Data Sheet10V Drive Nch MOSFET RCX120N20 Structure Dimensions (Unit : mm)TO-220FMSilicon N-channel MOSFET10.0 3.2 4.52.8Features1.21) Low on-resistance.1.32) Low input capacitance.0.83) High ESD.2.54 2.54 0.75 2.6(1) (2) (3) ApplicationSwitching Packaging specifications Inner circuitPackage BulkTypeCode -1Basic ordering un

..2. Size:252K inchange semiconductor
rcx120n20.pdf

isc N-Channel MOSFET Transistor RCX120N20FEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R = 325m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

6.1. Size:1169K rohm
rcx120n25.pdf

Data Sheet10V Drive Nch MOSFET RCX120N25 Structure Dimensions (Unit : mm)TO-220FMSilicon N-channel MOSFET10.0 3.2 4.52.81.2Features1.31) Low on-resistance.0.82) High speed switching.2.54 2.54 0.75 2.63) Gate-source voltage VGSS garanteed to be 30V(1) (2) (3) 4) High Power Package (TO-220FM). Application Inner circuitSwitching1

6.2. Size:251K inchange semiconductor
rcx120n25.pdf

isc N-Channel MOSFET Transistor RCX120N25FEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSStatic Drain-Source On-Resistance: R = 235m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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