RCX120N20 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Data Sheet10V Drive Nch MOSFET RCX120N20 Structure Dimensions (Unit : mm)TO-220FMSilicon N-channel MOSFET10.0 3.2 4.52.8Features1.21) Low on-resistance.1.32) Low input capacitance.0.83) High ESD.2.54 2.54 0.75 2.6(1) (2) (3) ApplicationSwitching Packaging specifications Inner circuitPackage BulkTypeCode -1Basic ordering un

isc N-Channel MOSFET Transistor RCX120N20FEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R = 325m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Data Sheet10V Drive Nch MOSFET RCX120N25 Structure Dimensions (Unit : mm)TO-220FMSilicon N-channel MOSFET10.0 3.2 4.52.81.2Features1.31) Low on-resistance.0.82) High speed switching.2.54 2.54 0.75 2.63) Gate-source voltage VGSS garanteed to be 30V(1) (2) (3) 4) High Power Package (TO-220FM). Application Inner circuitSwitching1

isc N-Channel MOSFET Transistor RCX120N25FEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSStatic Drain-Source On-Resistance: R = 235m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp