Справочник MOSFET. RCX120N20

 

RCX120N20 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: RCX120N20
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 33 ns
   Cossⓘ - Выходная емкость: 57 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.25 Ohm
   Тип корпуса: TO220FM
 

 Аналог (замена) для RCX120N20

   - подбор ⓘ MOSFET транзистора по параметрам

 

RCX120N20 Datasheet (PDF)

 ..1. Size:1180K  rohm
rcx120n20.pdfpdf_icon

RCX120N20

Data Sheet10V Drive Nch MOSFET RCX120N20 Structure Dimensions (Unit : mm)TO-220FMSilicon N-channel MOSFET10.0 3.2 4.52.8Features1.21) Low on-resistance.1.32) Low input capacitance.0.83) High ESD.2.54 2.54 0.75 2.6(1) (2) (3) ApplicationSwitching Packaging specifications Inner circuitPackage BulkTypeCode -1Basic ordering un

 ..2. Size:252K  inchange semiconductor
rcx120n20.pdfpdf_icon

RCX120N20

isc N-Channel MOSFET Transistor RCX120N20FEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R = 325m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 6.1. Size:1169K  rohm
rcx120n25.pdfpdf_icon

RCX120N20

Data Sheet10V Drive Nch MOSFET RCX120N25 Structure Dimensions (Unit : mm)TO-220FMSilicon N-channel MOSFET10.0 3.2 4.52.81.2Features1.31) Low on-resistance.0.82) High speed switching.2.54 2.54 0.75 2.63) Gate-source voltage VGSS garanteed to be 30V(1) (2) (3) 4) High Power Package (TO-220FM). Application Inner circuitSwitching1

 6.2. Size:251K  inchange semiconductor
rcx120n25.pdfpdf_icon

RCX120N20

isc N-Channel MOSFET Transistor RCX120N25FEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSStatic Drain-Source On-Resistance: R = 235m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Другие MOSFET... RCD075N20 , RCD080N25 , RCD100N20 , RCJ330N25 , RCJ450N20 , RCX050N25 , RCX080N20 , RCX080N25 , 7N60 , RCX120N25 , RCX160N20 , RCX330N25 , RCX450N20 , RHK005N03 , RHP020N06 , RHP030N03 , RJK005N03 .

History: WNMD2178 | WMR15N03TS | KP809B | SRT10N120LM | FDB0260N1007L | SSF65R190S3 | RU40C40M

 

 
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