RCX120N20 Specs and Replacement

Type Designator: RCX120N20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 57 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm

Package: TO220FM

RCX120N20 substitution

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RCX120N20 datasheet

 ..1. Size:1180K  rohm
 rcx120n20.pdf pdf_icon

RCX120N20

Data Sheet 10V Drive Nch MOSFET RCX120N20 Structure Dimensions (Unit mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 Features 1.2 1) Low on-resistance. 1.3 2) Low input capacitance. 0.8 3) High ESD. 2.54 2.54 0.75 2.6 (1) (2) (3) Application Switching Packaging specifications Inner circuit Package Bulk Type Code - 1 Basic ordering un... See More ⇒

 ..2. Size:252K  inchange semiconductor
 rcx120n20.pdf pdf_icon

RCX120N20

isc N-Channel MOSFET Transistor RCX120N20 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R = 325m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒

 6.1. Size:1169K  rohm
 rcx120n25.pdf pdf_icon

RCX120N20

Data Sheet 10V Drive Nch MOSFET RCX120N25 Structure Dimensions (Unit mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 1.2 Features 1.3 1) Low on-resistance. 0.8 2) High speed switching. 2.54 2.54 0.75 2.6 3) Gate-source voltage VGSS garanteed to be 30V (1) (2) (3) 4) High Power Package (TO-220FM). Application Inner circuit Switching 1 ... See More ⇒

 6.2. Size:251K  inchange semiconductor
 rcx120n25.pdf pdf_icon

RCX120N20

isc N-Channel MOSFET Transistor RCX120N25 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V =250V(Min) DSS Static Drain-Source On-Resistance R = 235m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒

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Detailed specifications: RCD075N20, RCD080N25, RCD100N20, RCJ330N25, RCJ450N20, RCX050N25, RCX080N20, RCX080N25, AO3407, RCX120N25, RCX160N20, RCX330N25, RCX450N20, RHK005N03, RHP020N06, RHP030N03, RJK005N03

Keywords - RCX120N20 MOSFET specs

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