RQ1A070AP Todos los transistores

 

RQ1A070AP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RQ1A070AP

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 135 nS

Cossⓘ - Capacitancia de salida: 900 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm

Encapsulados: TSMT8

 Búsqueda de reemplazo de RQ1A070AP MOSFET

- Selecciónⓘ de transistores por parámetros

 

RQ1A070AP datasheet

 ..1. Size:1197K  rohm
rq1a070ap.pdf pdf_icon

RQ1A070AP

Data Sheet 1.5V Drive Pch MOSFET RQ1A070AP Structure Dimensions (Unit mm) TSMT8 Silicon P-channel MOSFET (8) (7) (6) (5) Features 1) Low on-resistance. (1) (2) (3) (4) 2) Low voltage drive (1.5V drive). 3) Small surface mount package (TSMT8). Abbreviated symbol SG Application Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (

 7.1. Size:226K  rohm
rq1a070zptr.pdf pdf_icon

RQ1A070AP

1.5V Drive Pch MOSFET RQ1A070ZP Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSMT8 (8) (7) (6) (5) Features 1) Low On-resistance. 2) Low voltage drive. (1.5 V) 3) High power package. (1) (2) (3) (4) Applications Each lead has same dimensions Abbreviated symbol YJ Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (5) Type C

 7.2. Size:227K  rohm
rq1a070zp.pdf pdf_icon

RQ1A070AP

1.5V Drive Pch MOSFET RQ1A070ZP Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSMT8 (8) (7) (6) (5) Features 1) Low On-resistance. 2) Low voltage drive. (1.5 V) 3) High power package. (1) (2) (3) (4) Applications Each lead has same dimensions Abbreviated symbol YJ Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (5) Type C

 9.1. Size:650K  rohm
rq1a060zptr.pdf pdf_icon

RQ1A070AP

RQ1A060ZP Pch -12V -6A Power MOSFET Datasheet lOutline (8) VDSS (7) -12V TSMT8 (6) (5) RDS(on) (Max.) 23mW (1) ID -6A (2) (3) PD 1.5W (4) lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) -1.5V Drive. (2) Source (6) Drain (3) Source (7) Drain 3) Built-in G-S Protection Diode. (4) Gate (8) Drain *1 ESD PROTECTION DIODE 4) Small S

Otros transistores... RP1E090XN , RP1E100RP , RP1E100XN , RP1E125XN , RP1H065SP , RP1L055SN , RP1L080SN , RQ1A060ZP , AO4407A , RQ1A070ZP , RQ1C065UN , RQ1C075UN , RQ1E050RP , RQ1E070RP , RQ1E075XN , RQ1E100XN , RRF015P03 .

 

 

 


 
↑ Back to Top
.