RQ1A070AP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RQ1A070AP
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 135 nS
Cossⓘ - Capacitancia de salida: 900 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
Paquete / Cubierta: TSMT8
Búsqueda de reemplazo de RQ1A070AP MOSFET
RQ1A070AP datasheet
rq1a070ap.pdf
Data Sheet 1.5V Drive Pch MOSFET RQ1A070AP Structure Dimensions (Unit mm) TSMT8 Silicon P-channel MOSFET (8) (7) (6) (5) Features 1) Low on-resistance. (1) (2) (3) (4) 2) Low voltage drive (1.5V drive). 3) Small surface mount package (TSMT8). Abbreviated symbol SG Application Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (... See More ⇒
rq1a070zptr.pdf
1.5V Drive Pch MOSFET RQ1A070ZP Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSMT8 (8) (7) (6) (5) Features 1) Low On-resistance. 2) Low voltage drive. (1.5 V) 3) High power package. (1) (2) (3) (4) Applications Each lead has same dimensions Abbreviated symbol YJ Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (5) Type C... See More ⇒
rq1a070zp.pdf
1.5V Drive Pch MOSFET RQ1A070ZP Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSMT8 (8) (7) (6) (5) Features 1) Low On-resistance. 2) Low voltage drive. (1.5 V) 3) High power package. (1) (2) (3) (4) Applications Each lead has same dimensions Abbreviated symbol YJ Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (5) Type C... See More ⇒
rq1a060zptr.pdf
RQ1A060ZP Pch -12V -6A Power MOSFET Datasheet lOutline (8) VDSS (7) -12V TSMT8 (6) (5) RDS(on) (Max.) 23mW (1) ID -6A (2) (3) PD 1.5W (4) lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) -1.5V Drive. (2) Source (6) Drain (3) Source (7) Drain 3) Built-in G-S Protection Diode. (4) Gate (8) Drain *1 ESD PROTECTION DIODE 4) Small S... See More ⇒
Otros transistores... RP1E090XN , RP1E100RP , RP1E100XN , RP1E125XN , RP1H065SP , RP1L055SN , RP1L080SN , RQ1A060ZP , AO4407A , RQ1A070ZP , RQ1C065UN , RQ1C075UN , RQ1E050RP , RQ1E070RP , RQ1E075XN , RQ1E100XN , RRF015P03 .
History: MMDF3N02HDR2 | WMS175N10LG4
History: MMDF3N02HDR2 | WMS175N10LG4
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