All MOSFET. RQ1A070AP Datasheet

 

RQ1A070AP MOSFET. Datasheet pdf. Equivalent


   Type Designator: RQ1A070AP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 80 nC
   trⓘ - Rise Time: 135 nS
   Cossⓘ - Output Capacitance: 900 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TSMT8

 RQ1A070AP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RQ1A070AP Datasheet (PDF)

 ..1. Size:1197K  rohm
 rq1a070ap.pdf

RQ1A070AP RQ1A070AP

Data Sheet1.5V Drive Pch MOSFETRQ1A070AP Structure Dimensions (Unit : mm)TSMT8Silicon P-channel MOSFET(8) (7) (6) (5)Features1) Low on-resistance.(1) (2) (3) (4)2) Low voltage drive (1.5V drive).3) Small surface mount package (TSMT8).Abbreviated symbol : SG ApplicationSwitching Packaging specifications Inner circuitPackage Taping (8) (7) (6) (

 7.1. Size:226K  rohm
 rq1a070zptr.pdf

RQ1A070AP RQ1A070AP

1.5V Drive Pch MOSFET RQ1A070ZP Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT8(8) (7) (6) (5) Features 1) Low On-resistance. 2) Low voltage drive. (1.5 V) 3) High power package. (1) (2) (3) (4) Applications Each lead has same dimensionsAbbreviated symbol : YJSwitching Packaging specifications Inner circuit Package Taping (8) (7) (6) (5)Type C

 7.2. Size:227K  rohm
 rq1a070zp.pdf

RQ1A070AP RQ1A070AP

1.5V Drive Pch MOSFET RQ1A070ZP Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT8(8) (7) (6) (5) Features 1) Low On-resistance. 2) Low voltage drive. (1.5 V) 3) High power package. (1) (2) (3) (4) Applications Each lead has same dimensionsAbbreviated symbol : YJSwitching Packaging specifications Inner circuit Package Taping (8) (7) (6) (5)Type C

 9.1. Size:650K  rohm
 rq1a060zptr.pdf

RQ1A070AP RQ1A070AP

RQ1A060ZP Pch -12V -6A Power MOSFET DatasheetlOutline(8) VDSS(7) -12V TSMT8(6) (5) RDS(on) (Max.)23mW(1) ID-6A(2) (3) PD1.5W(4) lFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) -1.5V Drive.(2) Source (6) Drain (3) Source (7) Drain 3) Built-in G-S Protection Diode.(4) Gate (8) Drain *1 ESD PROTECTION DIODE 4) Small S

 9.2. Size:219K  rohm
 rq1a060zp.pdf

RQ1A070AP RQ1A070AP

1.5V Drive Pch MOSFET RQ1A060ZP Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT83.00.8(8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package. 0.17(1) (2) (3) (4)3) Low voltage drive. (1.5V) 0.650.32Abbreviated symbol : YH Each lead has same dimensions Applications Equivalent circuit Switching (8) (7) (6) (5) Packaging specifi

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AP9964GM | AFP9565S

 

 
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