RSQ045N03 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RSQ045N03

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 19 nS

Cossⓘ - Capacitancia de salida: 150 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.027 Ohm

Encapsulados: TSMT6

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RSQ045N03 datasheet

 ..1. Size:119K  rohm
 rsq045n03.pdf pdf_icon

RSQ045N03

RSQ045N03 Transistors 4V Drive Nch MOSFET RSQ045N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) Low voltage drive (4V drive). Each lead has same dimensions Applications Abbreviated symbol QL Switching Packaging specifications Inner circuit (6) (5) (4)

 0.1. Size:1083K  rohm
 rsq045n03fra.pdf pdf_icon

RSQ045N03

RSQ045N03FRA Nch 30V 4.5A Power MOSFET Datasheet AEC-Q101 Qualified lOutline (6) VDSS 30V TSMT6 (5) (4) RDS(on) (Max.) 38mW ID (1) 4.5A (2) PD 1.25W (3) lFeatures lInner circuit 1) Low on - resistance. (1) Drain (2) Drain 2) Built-in G-S Protection Diode. (3) Gate (4) Source 3) Small Surface Mount Package (TSMT6). (5) Drain (6) Drain 4) Pb-free lead plati

 0.2. Size:117K  rohm
 rsq045n03tr.pdf pdf_icon

RSQ045N03

RSQ045N03 Transistors 4V Drive Nch MOSFET RSQ045N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) Low voltage drive (4V drive). Each lead has same dimensions Applications Abbreviated symbol QL Switching Packaging specifications Inner circuit (6) (5) (4)

 0.3. Size:842K  cn vbsemi
 rsq045n03tr.pdf pdf_icon

RSQ045N03

RSQ045N03TR www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.030 at VGS = 10 V 6 Low On-Resistance 30 4.2 nC 0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 APPLICATIONS DC/

MOSTRAR MÁS

Otros transistores... RSJ450N04, RSJ550N10, RSJ650N10, RSM002N06, RSM002P03, RSQ015N06, RSQ015P10, RSQ020N03, AON6380, RSR010N10, RSR020N06, RSR025N03, RSR025N05, RSR030N06, RSU002N06, RSU002P03, RT1A045AP