RSQ045N03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RSQ045N03
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 4.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 Vtrⓘ - Tiempo de subida: 19 nS
Cossⓘ - Capacitancia de salida: 150 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.027 Ohm
Paquete / Cubierta: TSMT6
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RSQ045N03 Datasheet (PDF)
rsq045n03.pdf
RSQ045N03 Transistors 4V Drive Nch MOSFET RSQ045N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) Low voltage drive (4V drive). Each lead has same dimensions ApplicationsAbbreviated symbol : QLSwitching Packaging specifications Inner circuit (6) (5) (4)
rsq045n03fra.pdf
RSQ045N03FRA Nch 30V 4.5A Power MOSFET DatasheetAEC-Q101 QualifiedlOutline(6) VDSS30VTSMT6 (5) (4) RDS(on) (Max.)38mWID (1) 4.5A(2) PD1.25W(3) lFeatures lInner circuit1) Low on - resistance.(1) Drain (2) Drain 2) Built-in G-S Protection Diode.(3) Gate (4) Source 3) Small Surface Mount Package (TSMT6).(5) Drain (6) Drain 4) Pb-free lead plati
rsq045n03tr.pdf
RSQ045N03 Transistors 4V Drive Nch MOSFET RSQ045N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) Low voltage drive (4V drive). Each lead has same dimensions ApplicationsAbbreviated symbol : QLSwitching Packaging specifications Inner circuit (6) (5) (4)
rsq045n03tr.pdf
RSQ045N03TRwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS DC/
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 17P10G-TM3-T
History: 17P10G-TM3-T
Liste
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