RSQ045N03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RSQ045N03
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 4.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 19 nS
Cossⓘ - Capacitancia de salida: 150 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.027 Ohm
Paquete / Cubierta: TSMT6
Búsqueda de reemplazo de RSQ045N03 MOSFET
RSQ045N03 Datasheet (PDF)
rsq045n03.pdf

RSQ045N03 Transistors 4V Drive Nch MOSFET RSQ045N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) Low voltage drive (4V drive). Each lead has same dimensions ApplicationsAbbreviated symbol : QLSwitching Packaging specifications Inner circuit (6) (5) (4)
rsq045n03fra.pdf

RSQ045N03FRA Nch 30V 4.5A Power MOSFET DatasheetAEC-Q101 QualifiedlOutline(6) VDSS30VTSMT6 (5) (4) RDS(on) (Max.)38mWID (1) 4.5A(2) PD1.25W(3) lFeatures lInner circuit1) Low on - resistance.(1) Drain (2) Drain 2) Built-in G-S Protection Diode.(3) Gate (4) Source 3) Small Surface Mount Package (TSMT6).(5) Drain (6) Drain 4) Pb-free lead plati
rsq045n03tr.pdf

RSQ045N03 Transistors 4V Drive Nch MOSFET RSQ045N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) Low voltage drive (4V drive). Each lead has same dimensions ApplicationsAbbreviated symbol : QLSwitching Packaging specifications Inner circuit (6) (5) (4)
rsq045n03tr.pdf

RSQ045N03TRwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS DC/
Otros transistores... RSJ450N04 , RSJ550N10 , RSJ650N10 , RSM002N06 , RSM002P03 , RSQ015N06 , RSQ015P10 , RSQ020N03 , IRLZ44N , RSR010N10 , RSR020N06 , RSR025N03 , RSR025N05 , RSR030N06 , RSU002N06 , RSU002P03 , RT1A045AP .
History: FHS150N03A | FTP08N50
History: FHS150N03A | FTP08N50



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