RSQ045N03 Specs and Replacement

Type Designator: RSQ045N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: TSMT6

RSQ045N03 substitution

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RSQ045N03 datasheet

 ..1. Size:119K  rohm
 rsq045n03.pdf pdf_icon

RSQ045N03

RSQ045N03 Transistors 4V Drive Nch MOSFET RSQ045N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) Low voltage drive (4V drive). Each lead has same dimensions Applications Abbreviated symbol QL Switching Packaging specifications Inner circuit (6) (5) (4) ... See More ⇒

 0.1. Size:1083K  rohm
 rsq045n03fra.pdf pdf_icon

RSQ045N03

RSQ045N03FRA Nch 30V 4.5A Power MOSFET Datasheet AEC-Q101 Qualified lOutline (6) VDSS 30V TSMT6 (5) (4) RDS(on) (Max.) 38mW ID (1) 4.5A (2) PD 1.25W (3) lFeatures lInner circuit 1) Low on - resistance. (1) Drain (2) Drain 2) Built-in G-S Protection Diode. (3) Gate (4) Source 3) Small Surface Mount Package (TSMT6). (5) Drain (6) Drain 4) Pb-free lead plati... See More ⇒

 0.2. Size:117K  rohm
 rsq045n03tr.pdf pdf_icon

RSQ045N03

RSQ045N03 Transistors 4V Drive Nch MOSFET RSQ045N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) Low voltage drive (4V drive). Each lead has same dimensions Applications Abbreviated symbol QL Switching Packaging specifications Inner circuit (6) (5) (4) ... See More ⇒

 0.3. Size:842K  cn vbsemi
 rsq045n03tr.pdf pdf_icon

RSQ045N03

RSQ045N03TR www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.030 at VGS = 10 V 6 Low On-Resistance 30 4.2 nC 0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 APPLICATIONS DC/... See More ⇒

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Detailed specifications: RSJ450N04, RSJ550N10, RSJ650N10, RSM002N06, RSM002P03, RSQ015N06, RSQ015P10, RSQ020N03, AON6380, RSR010N10, RSR020N06, RSR025N03, RSR025N05, RSR030N06, RSU002N06, RSU002P03, RT1A045AP

Keywords - RSQ045N03 MOSFET specs

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