RSQ045N03 - описание и поиск аналогов

RSQ045N03 Transistors 4V Drive Nch MOSFET RSQ045N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) Low voltage drive (4V drive). Each lead has same dimensions Applications Abbreviated symbol QL Switching Packaging specifications Inner circuit (6) (5) (4)

RSQ045N03FRA Nch 30V 4.5A Power MOSFET Datasheet AEC-Q101 Qualified lOutline (6) VDSS 30V TSMT6 (5) (4) RDS(on) (Max.) 38mW ID (1) 4.5A (2) PD 1.25W (3) lFeatures lInner circuit 1) Low on - resistance. (1) Drain (2) Drain 2) Built-in G-S Protection Diode. (3) Gate (4) Source 3) Small Surface Mount Package (TSMT6). (5) Drain (6) Drain 4) Pb-free lead plati

RSQ045N03 Transistors 4V Drive Nch MOSFET RSQ045N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) Low voltage drive (4V drive). Each lead has same dimensions Applications Abbreviated symbol QL Switching Packaging specifications Inner circuit (6) (5) (4)

RSQ045N03TR www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.030 at VGS = 10 V 6 Low On-Resistance 30 4.2 nC 0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 APPLICATIONS DC/