RT1A050ZP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

1.5V Drive Pch MOSFET RT1A050ZP Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSST8(8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package. (1) (2) (3) (4)3) Low voltage drive. (1.5V) Abbreviated symbol : YH Applications Each lead has same dimensionsSwitching Packaging specifications Equivalent circuit Package Taping(8) (7) (6) (5)

1.5V Drive Pch MOSFET RT1A050ZP Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSST8(8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package. (1) (2) (3) (4)3) Low voltage drive. (1.5V) Abbreviated symbol : YH Applications Each lead has same dimensionsSwitching Packaging specifications Equivalent circuit Package Taping(8) (7) (6) (5)

Data Sheet1.5V Drive Pch MOSFETRT1A045AP Structure Dimensions (Unit : mm)Silicon P-channel MOSFETTSST8(8) (7) (6) (5)Features1) Low On-resistance.2) Small high power package. (1) (2) (3) (4)3) Low voltage drive.(1.5V)Abbreviated symbol : SC ApplicationSwitching Packaging specifications Inner circuitPackage Taping(8) (7) (6) (5)TypeCode TR

1.5V Drive Pch MOSFET RT1A040ZP Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSST8(8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package. (1) (2) (3) (4)3) Low voltage drive. (1.5V) Abbreviated symbol : YEEach lead has same dimensions Applications Switching Packaging specifications Equivalent circuit Package Taping (8) (7) (6) (5)

Data Sheet1.5V Drive Pch MOSFETRT1A060AP Structure Dimensions (Unit : mm)Silicon P-channel MOSFETTSST8(8) (7) (6) (5)Features1) Low on-resistance.(1) (2) (3) (4)2) Low voltage drive (1.5V drive).3) Small surface mount package (TSST8).Abbreviated symbol : SG ApplicationSwitching Packaging specifications Inner circuit(8) (7) (6) (5)Package Tap