Справочник MOSFET. RT1A050ZP

 

RT1A050ZP Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: RT1A050ZP
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 12 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 95 ns
   Cossⓘ - Выходная емкость: 340 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.019 Ohm
   Тип корпуса: TSST8
 

 Аналог (замена) для RT1A050ZP

   - подбор ⓘ MOSFET транзистора по параметрам

 

RT1A050ZP Datasheet (PDF)

 ..1. Size:214K  rohm
rt1a050zp.pdfpdf_icon

RT1A050ZP

1.5V Drive Pch MOSFET RT1A050ZP Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSST8(8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package. (1) (2) (3) (4)3) Low voltage drive. (1.5V) Abbreviated symbol : YH Applications Each lead has same dimensionsSwitching Packaging specifications Equivalent circuit Package Taping(8) (7) (6) (5)

 0.1. Size:214K  rohm
rt1a050zptr.pdfpdf_icon

RT1A050ZP

1.5V Drive Pch MOSFET RT1A050ZP Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSST8(8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package. (1) (2) (3) (4)3) Low voltage drive. (1.5V) Abbreviated symbol : YH Applications Each lead has same dimensionsSwitching Packaging specifications Equivalent circuit Package Taping(8) (7) (6) (5)

 9.1. Size:1126K  rohm
rt1a045ap.pdfpdf_icon

RT1A050ZP

Data Sheet1.5V Drive Pch MOSFETRT1A045AP Structure Dimensions (Unit : mm)Silicon P-channel MOSFETTSST8(8) (7) (6) (5)Features1) Low On-resistance.2) Small high power package. (1) (2) (3) (4)3) Low voltage drive.(1.5V)Abbreviated symbol : SC ApplicationSwitching Packaging specifications Inner circuitPackage Taping(8) (7) (6) (5)TypeCode TR

 9.2. Size:218K  rohm
rt1a040zptr.pdfpdf_icon

RT1A050ZP

1.5V Drive Pch MOSFET RT1A040ZP Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSST8(8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package. (1) (2) (3) (4)3) Low voltage drive. (1.5V) Abbreviated symbol : YEEach lead has same dimensions Applications Switching Packaging specifications Equivalent circuit Package Taping (8) (7) (6) (5)

Другие MOSFET... RSR010N10 , RSR020N06 , RSR025N03 , RSR025N05 , RSR030N06 , RSU002N06 , RSU002P03 , RT1A045AP , 18N50 , RT1A060AP , RT1C060UN , RT1E040RP , RT1E050RP , RT1E060XN , RTF015N03 , RTF016N05 , RTF025N03 .

History: VBE2102M | OSG80R380HF

 

 
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