RT1A050ZP PDF and Equivalents Search

 

RT1A050ZP Specs and Replacement

Type Designator: RT1A050ZP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 95 nS

Cossⓘ - Output Capacitance: 340 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm

Package: TSST8

RT1A050ZP substitution

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RT1A050ZP datasheet

 ..1. Size:214K  rohm
 rt1a050zp.pdf pdf_icon

RT1A050ZP

1.5V Drive Pch MOSFET RT1A050ZP Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSST8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package. (1) (2) (3) (4) 3) Low voltage drive. (1.5V) Abbreviated symbol YH Applications Each lead has same dimensions Switching Packaging specifications Equivalent circuit Package Taping (8) (7) (6) (5) ... See More ⇒

 0.1. Size:214K  rohm
 rt1a050zptr.pdf pdf_icon

RT1A050ZP

1.5V Drive Pch MOSFET RT1A050ZP Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSST8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package. (1) (2) (3) (4) 3) Low voltage drive. (1.5V) Abbreviated symbol YH Applications Each lead has same dimensions Switching Packaging specifications Equivalent circuit Package Taping (8) (7) (6) (5) ... See More ⇒

 9.1. Size:1126K  rohm
 rt1a045ap.pdf pdf_icon

RT1A050ZP

Data Sheet 1.5V Drive Pch MOSFET RT1A045AP Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSST8 (8) (7) (6) (5) Features 1) Low On-resistance. 2) Small high power package. (1) (2) (3) (4) 3) Low voltage drive.(1.5V) Abbreviated symbol SC Application Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (5) Type Code TR ... See More ⇒

 9.2. Size:218K  rohm
 rt1a040zptr.pdf pdf_icon

RT1A050ZP

1.5V Drive Pch MOSFET RT1A040ZP Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSST8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package. (1) (2) (3) (4) 3) Low voltage drive. (1.5V) Abbreviated symbol YE Each lead has same dimensions Applications Switching Packaging specifications Equivalent circuit Package Taping (8) (7) (6) (5) ... See More ⇒

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Detailed specifications: RSR010N10 , RSR020N06 , RSR025N03 , RSR025N05 , RSR030N06 , RSU002N06 , RSU002P03 , RT1A045AP , BS170 , RT1A060AP , RT1C060UN , RT1E040RP , RT1E050RP , RT1E060XN , RTF015N03 , RTF016N05 , RTF025N03 .

Keywords - RT1A050ZP MOSFET specs

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