RT1A060AP Todos los transistores

 

RT1A060AP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RT1A060AP

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.25 W

Tensión drenaje-fuente (Vds): 12 V

Tensión compuerta-fuente (Vgs): 8 V

Corriente continua de drenaje (Id): 6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 80 nC

Tiempo de elevación (tr): 100 nS

Conductancia de drenaje-sustrato (Cd): 900 pF

Resistencia drenaje-fuente RDS(on): 0.014 Ohm

Empaquetado / Estuche: TSST8

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RT1A060AP Datasheet (PDF)

1.1. rt1a060ap.pdf Size:1228K _rohm

RT1A060AP
RT1A060AP

Data Sheet 1.5V Drive Pch MOSFET RT1A060AP ? Structure ? Dimensions (Unit : mm) Silicon P-channel MOSFET TSST8 (8) (7) (6) (5) ?Features 1) Low on-resistance. (1) (2) (3) (4) 2) Low voltage drive (1.5V drive). 3) Small surface mount package (TSST8). Abbreviated symbol : SG ? Application Switching ? Packaging specifications ? Inner circuit (8) (7) (6) (5) Package Taping Type Code

5.1. rt1a050zptr.pdf Size:214K _update_mosfet

RT1A060AP
RT1A060AP

1.5V Drive Pch MOSFET RT1A050ZP Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSST8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package. (1) (2) (3) (4) 3) Low voltage drive. (1.5V) Abbreviated symbol : YH Applications Each lead has same dimensions Switching Packaging specifications Equivalent circuit Package Taping (8) (7) (6) (5)

5.2. rt1a040zptr.pdf Size:218K _update_mosfet

RT1A060AP
RT1A060AP

1.5V Drive Pch MOSFET RT1A040ZP Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSST8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package. (1) (2) (3) (4) 3) Low voltage drive. (1.5V) Abbreviated symbol : YE Each lead has same dimensions Applications Switching Packaging specifications Equivalent circuit Package Taping (8) (7) (6) (5)

 5.3. rt1a050zp.pdf Size:214K _rohm

RT1A060AP
RT1A060AP

1.5V Drive Pch MOSFET RT1A050ZP Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSST8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package. (1) (2) (3) (4) 3) Low voltage drive. (1.5V) Abbreviated symbol : YH Applications Each lead has same dimensions Switching Packaging specifications Equivalent circuit Package Taping (8) (7) (6) (5) Ty

5.4. rt1a045ap.pdf Size:1126K _rohm

RT1A060AP
RT1A060AP

Data Sheet 1.5V Drive Pch MOSFET RT1A045AP ? Structure ? Dimensions (Unit : mm) Silicon P-channel MOSFET TSST8 (8) (7) (6) (5) ?Features 1) Low On-resistance. 2) Small high power package. (1) (2) (3) (4) 3) Low voltage drive.(1.5V) Abbreviated symbol : SC ? Application Switching ? Packaging specifications ? Inner circuit Package Taping (8) (7) (6) (5) Type Code TR Basic ordering

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