RT1A060AP Todos los transistores

 

RT1A060AP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RT1A060AP
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 100 nS
   Cossⓘ - Capacitancia de salida: 900 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
   Paquete / Cubierta: TSST8
 

 Búsqueda de reemplazo de RT1A060AP MOSFET

   - Selección ⓘ de transistores por parámetros

 

RT1A060AP PDF Specs

 ..1. Size:1228K  rohm
rt1a060ap.pdf pdf_icon

RT1A060AP

Data Sheet 1.5V Drive Pch MOSFET RT1A060AP Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSST8 (8) (7) (6) (5) Features 1) Low on-resistance. (1) (2) (3) (4) 2) Low voltage drive (1.5V drive). 3) Small surface mount package (TSST8). Abbreviated symbol SG Application Switching Packaging specifications Inner circuit (8) (7) (6) (5) Package Tap... See More ⇒

 9.1. Size:1126K  rohm
rt1a045ap.pdf pdf_icon

RT1A060AP

Data Sheet 1.5V Drive Pch MOSFET RT1A045AP Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSST8 (8) (7) (6) (5) Features 1) Low On-resistance. 2) Small high power package. (1) (2) (3) (4) 3) Low voltage drive.(1.5V) Abbreviated symbol SC Application Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (5) Type Code TR ... See More ⇒

 9.2. Size:214K  rohm
rt1a050zptr.pdf pdf_icon

RT1A060AP

1.5V Drive Pch MOSFET RT1A050ZP Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSST8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package. (1) (2) (3) (4) 3) Low voltage drive. (1.5V) Abbreviated symbol YH Applications Each lead has same dimensions Switching Packaging specifications Equivalent circuit Package Taping (8) (7) (6) (5) ... See More ⇒

 9.3. Size:214K  rohm
rt1a050zp.pdf pdf_icon

RT1A060AP

1.5V Drive Pch MOSFET RT1A050ZP Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSST8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package. (1) (2) (3) (4) 3) Low voltage drive. (1.5V) Abbreviated symbol YH Applications Each lead has same dimensions Switching Packaging specifications Equivalent circuit Package Taping (8) (7) (6) (5) ... See More ⇒

Otros transistores... RSR020N06 , RSR025N03 , RSR025N05 , RSR030N06 , RSU002N06 , RSU002P03 , RT1A045AP , RT1A050ZP , 4N60 , RT1C060UN , RT1E040RP , RT1E050RP , RT1E060XN , RTF015N03 , RTF016N05 , RTF025N03 , RTL035N03 .

 

 
Back to Top

 


social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AP4688S | AP4606 | AP4580 | AP4435C | AP4410 | AP4409S | AP4407C | AP4407 | AP3N50K | AP3N50F | AP3912GD | AP3415E | AP3404S | AP3404 | AP3205 | AP3139

 

 

 
Back to Top

 

Popular searches

b1565 | nce82h140 | 2n2369 equivalent | 2sd313 datasheet | k8a50d datasheet | 2sc381 | datasheet mosfet | 2sk2586

 


 
.