RT1A060AP MOSFET Datasheet: P-Ch, 12V, 6A. Full specification with pinout and replacement list

RT1A060AP Specs and Replacement

Type Designator: RT1A060AP

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 900 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: TSST8

RT1A060AP substitution

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RT1A060AP datasheet

..1. Size:1228K rohm
rt1a060ap.pdf pdf_icon

Data Sheet 1.5V Drive Pch MOSFET RT1A060AP Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSST8 (8) (7) (6) (5) Features 1) Low on-resistance. (1) (2) (3) (4) 2) Low voltage drive (1.5V drive). 3) Small surface mount package (TSST8). Abbreviated symbol SG Application Switching Packaging specifications Inner circuit (8) (7) (6) (5) Package Tap... See More ⇒

9.1. Size:1126K rohm
rt1a045ap.pdf pdf_icon

Data Sheet 1.5V Drive Pch MOSFET RT1A045AP Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSST8 (8) (7) (6) (5) Features 1) Low On-resistance. 2) Small high power package. (1) (2) (3) (4) 3) Low voltage drive.(1.5V) Abbreviated symbol SC Application Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (5) Type Code TR ... See More ⇒

9.2. Size:214K rohm
rt1a050zptr.pdf pdf_icon

1.5V Drive Pch MOSFET RT1A050ZP Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSST8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package. (1) (2) (3) (4) 3) Low voltage drive. (1.5V) Abbreviated symbol YH Applications Each lead has same dimensions Switching Packaging specifications Equivalent circuit Package Taping (8) (7) (6) (5) ... See More ⇒

9.3. Size:214K rohm
rt1a050zp.pdf pdf_icon