Справочник MOSFET. RT1A060AP

 

RT1A060AP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RT1A060AP
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1.25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 12 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 100 ns
   Cossⓘ - Выходная емкость: 900 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.014 Ohm
   Тип корпуса: TSST8

 Аналог (замена) для RT1A060AP

 

 

RT1A060AP Datasheet (PDF)

 ..1. Size:1228K  rohm
 rt1a060ap.pdf

RT1A060AP RT1A060AP

Data Sheet1.5V Drive Pch MOSFETRT1A060AP Structure Dimensions (Unit : mm)Silicon P-channel MOSFETTSST8(8) (7) (6) (5)Features1) Low on-resistance.(1) (2) (3) (4)2) Low voltage drive (1.5V drive).3) Small surface mount package (TSST8).Abbreviated symbol : SG ApplicationSwitching Packaging specifications Inner circuit(8) (7) (6) (5)Package Tap

 9.1. Size:1126K  rohm
 rt1a045ap.pdf

RT1A060AP RT1A060AP

Data Sheet1.5V Drive Pch MOSFETRT1A045AP Structure Dimensions (Unit : mm)Silicon P-channel MOSFETTSST8(8) (7) (6) (5)Features1) Low On-resistance.2) Small high power package. (1) (2) (3) (4)3) Low voltage drive.(1.5V)Abbreviated symbol : SC ApplicationSwitching Packaging specifications Inner circuitPackage Taping(8) (7) (6) (5)TypeCode TR

 9.2. Size:214K  rohm
 rt1a050zptr.pdf

RT1A060AP RT1A060AP

1.5V Drive Pch MOSFET RT1A050ZP Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSST8(8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package. (1) (2) (3) (4)3) Low voltage drive. (1.5V) Abbreviated symbol : YH Applications Each lead has same dimensionsSwitching Packaging specifications Equivalent circuit Package Taping(8) (7) (6) (5)

 9.3. Size:214K  rohm
 rt1a050zp.pdf

RT1A060AP RT1A060AP

1.5V Drive Pch MOSFET RT1A050ZP Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSST8(8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package. (1) (2) (3) (4)3) Low voltage drive. (1.5V) Abbreviated symbol : YH Applications Each lead has same dimensionsSwitching Packaging specifications Equivalent circuit Package Taping(8) (7) (6) (5)

 9.4. Size:218K  rohm
 rt1a040zptr.pdf

RT1A060AP RT1A060AP

1.5V Drive Pch MOSFET RT1A040ZP Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSST8(8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package. (1) (2) (3) (4)3) Low voltage drive. (1.5V) Abbreviated symbol : YEEach lead has same dimensions Applications Switching Packaging specifications Equivalent circuit Package Taping (8) (7) (6) (5)

Другие MOSFET... RSR020N06 , RSR025N03 , RSR025N05 , RSR030N06 , RSU002N06 , RSU002P03 , RT1A045AP , RT1A050ZP , P60NF06 , RT1C060UN , RT1E040RP , RT1E050RP , RT1E060XN , RTF015N03 , RTF016N05 , RTF025N03 , RTL035N03 .

 

 
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