RTF016N05 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RTF016N05

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.8 W

Tensión drenaje-fuente (Vds): 45 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 1.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 14 nS

Conductancia de drenaje-sustrato (Cd): 40 pF

Resistencia drenaje-fuente RDS(on): 0.14 Ohm

Empaquetado / Estuche: TUMT3

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RTF016N05 Datasheet (PDF)

1.1. rtf016n05.pdf Size:1118K _rohm

Data Sheet 2.5V Drive Nch MOSFET RTF016N05 ? Structure ? Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT3 ?Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT3). Abbreviated symbol : PU ? Application Switching ? Packaging specifications ? Inner circuit (3) Package Taping Type Code TL Basic ordering unit (pieces) 3000 ?2 R

5.1. rtf015p02tl.pdf Size:88K _update_mosfet

RTF015P02 Transistors DC-DC Converter (-20V, -1.5A) RTF015P02 External dimensions (Unit : mm) Features 1) Low on-resistance. (80mΩ at 2.5V) TUMT3 2.0±0.1 0.85MAX 2) High power package. 0.77±0.05 0.3+0.1 -0.05 3) High speed switching. (3) 4) Low voltage drive. (2.5V) 0 to 0.1 (1) (2) Applications 0.65 0.65 0.17±0.05 DC-DC converter 1.3±0.1 Each lead has

5.2. rtf015n03tl.pdf Size:157K _update_mosfet

2.5V Drive Nch MOSFET RTF015N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT3 0.85Max. 2.0 0.3 0.77 Features (3) 1) Low On-resistance. 0~0.1 2) Space saving, small surface mount package (TUMT3). (1) (2) 3) Low voltage drive (2.5V drive). 0.17 0.65 0.65 1.3 (1) Gate (2) Source Abbreviated symbol : PP Applications (3) Drain Switching Packagi

5.3. rtf010p02tl.pdf Size:89K _update_mosfet

RTF010P02 Transistors DC-DC Converter (-20V, -1.0A) RTF010P02 External dimensions (Unit : mm) Features 1) Low on-resistance. (80mΩ at 2.5V) TUMT3 2.0±0.1 0.85MAX 2) High power package. 0.77±0.05 0.3+0.1 -0.05 3) High speed switching. (3) 4) Low voltage drive. (2.5V) 0 to 0.1 (1) (2) Applications 0.65 0.65 0.17±0.05 DC-DC converter 1.3±0.1 Each lead has

5.4. rtf010p02.pdf Size:95K _update_mosfet

RTF010P02 Transistors 2.5V Drive Pch MOSFET RTF010P02 Dimensions (Unit : mm) Structure Silicon P-channel TUMT3 MOSFET Features 1) Low on-resistance. (570mΩ at 2.5V) 2) High power package. 3) High speed switching. (1) Gate 4) Low voltage drive. (2.5V) (2) Source Abbreviated symbol : WQ (3) Drain Applications DC-DC converter Packaging specifications Equi

5.5. rtf015n03.pdf Size:158K _rohm