RTF016N05 Todos los transistores

 

RTF016N05 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RTF016N05
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 45 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 1.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm
   Paquete / Cubierta: TUMT3
 

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RTF016N05 datasheet

 ..1. Size:1118K  rohm
 rtf016n05.pdf pdf_icon

RTF016N05

Data Sheet 2.5V Drive Nch MOSFET RTF016N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT3 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT3). Abbreviated symbol PU Application Switching Packaging specifications Inner circuit (3) Package Taping Type Code TL Basic ordering unit (piec

 9.1. Size:158K  rohm
 rtf015n03.pdf pdf_icon

RTF016N05

2.5V Drive Nch MOSFET RTF015N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT3 0.85Max. 2.0 0.3 0.77 Features (3) 1) Low On-resistance. 0 0.1 2) Space saving, small surface mount package (TUMT3). (1) (2) 3) Low voltage drive (2.5V drive). 0.17 0.65 0.65 1.3 (1) Gate (2) Source Abbreviated symbol PP Applications (3) Drain Switching Packagi

 9.2. Size:95K  rohm
 rtf010p02.pdf pdf_icon

RTF016N05

RTF010P02 Transistors 2.5V Drive Pch MOSFET RTF010P02 Dimensions (Unit mm) Structure Silicon P-channel TUMT3 MOSFET Features 1) Low on-resistance. (570m at 2.5V) 2) High power package. 3) High speed switching. (1) Gate 4) Low voltage drive. (2.5V) (2) Source Abbreviated symbol WQ (3) Drain Applications DC-DC converter Packaging specifications Equi

 9.3. Size:89K  rohm
 rtf010p02tl.pdf pdf_icon

RTF016N05

RTF010P02 Transistors DC-DC Converter (-20V, -1.0A) RTF010P02 External dimensions (Unit mm) Features 1) Low on-resistance. (80m at 2.5V) TUMT3 2.0 0.1 0.85MAX 2) High power package. 0.77 0.05 0.3+0.1 -0.05 3) High speed switching. (3) 4) Low voltage drive. (2.5V) 0 to 0.1 (1) (2) Applications 0.65 0.65 0.17 0.05 DC-DC converter 1.3 0.1 Each lead has

MOSTRAR MÁS

Otros transistores... RT1A045AP , RT1A050ZP , RT1A060AP , RT1C060UN , RT1E040RP , RT1E050RP , RT1E060XN , RTF015N03 , RFP50N06 , RTF025N03 , RTL035N03 , RTQ020N03 , RTQ020N05 , RTQ035N03 , RTQ045N03 , RTR020N05 , RTR025N03 .

 

 
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