RTF016N05 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RTF016N05
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 45 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 1.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 40 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm
Paquete / Cubierta: TUMT3
Búsqueda de reemplazo de MOSFET RTF016N05
RTF016N05 Datasheet (PDF)
rtf016n05.pdf
Data Sheet2.5V Drive Nch MOSFET RTF016N05 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETTUMT3Features1) Low on-resistance.2) Built-in G-S Protection Diode.3) Small Surface Mount Package (TUMT3).Abbreviated symbol : PU ApplicationSwitching Packaging specifications Inner circuit(3)Package TapingTypeCode TLBasic ordering unit (piec
rtf015n03.pdf
2.5V Drive Nch MOSFET RTF015N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT30.85Max.2.00.30.77 Features (3)1) Low On-resistance. 0~0.12) Space saving, small surface mount package (TUMT3). (1) (2)3) Low voltage drive (2.5V drive). 0.170.65 0.651.3(1) Gate(2) SourceAbbreviated symbol : PP Applications (3) DrainSwitching Packagi
rtf010p02.pdf
RTF010P02 Transistors 2.5V Drive Pch MOSFET RTF010P02 Dimensions (Unit : mm) Structure Silicon P-channel TUMT3MOSFET Features 1) Low on-resistance. (570m at 2.5V) 2) High power package. 3) High speed switching. (1) Gate4) Low voltage drive. (2.5V) (2) SourceAbbreviated symbol : WQ(3) Drain Applications DC-DC converter Packaging specifications Equi
rtf010p02tl.pdf
RTF010P02 Transistors DC-DC Converter (-20V, -1.0A) RTF010P02 External dimensions (Unit : mm) Features 1) Low on-resistance. (80m at 2.5V) TUMT32.00.1 0.85MAX2) High power package. 0.770.050.3+0.1-0.053) High speed switching. (3)4) Low voltage drive. (2.5V) 0 to 0.1(1) (2) Applications 0.65 0.650.170.05DC-DC converter 1.30.1Each lead has
rtf015p02tl.pdf
RTF015P02 Transistors DC-DC Converter (-20V, -1.5A) RTF015P02 External dimensions (Unit : mm) Features 1) Low on-resistance. (80m at 2.5V) TUMT32.00.1 0.85MAX2) High power package. 0.770.050.3+0.1-0.053) High speed switching. (3)4) Low voltage drive. (2.5V) 0 to 0.1(1) (2) Applications 0.65 0.650.170.05DC-DC converter 1.30.1Each lead has
rtf015n03tl.pdf
2.5V Drive Nch MOSFET RTF015N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT30.85Max.2.00.30.77 Features (3)1) Low On-resistance. 0~0.12) Space saving, small surface mount package (TUMT3). (1) (2)3) Low voltage drive (2.5V drive). 0.170.65 0.651.3(1) Gate(2) SourceAbbreviated symbol : PP Applications (3) DrainSwitching Packagi
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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