Справочник MOSFET. RTF016N05

 

RTF016N05 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RTF016N05
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 0.8 W
   Предельно допустимое напряжение сток-исток |Uds|: 45 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
   Пороговое напряжение включения |Ugs(th)|: 1.5 V
   Максимально допустимый постоянный ток стока |Id|: 1.6 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 2.3 nC
   Время нарастания (tr): 14 ns
   Выходная емкость (Cd): 40 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.14 Ohm
   Тип корпуса: TUMT3

 Аналог (замена) для RTF016N05

 

 

RTF016N05 Datasheet (PDF)

 ..1. Size:1118K  rohm
 rtf016n05.pdf

RTF016N05 RTF016N05

Data Sheet2.5V Drive Nch MOSFET RTF016N05 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETTUMT3Features1) Low on-resistance.2) Built-in G-S Protection Diode.3) Small Surface Mount Package (TUMT3).Abbreviated symbol : PU ApplicationSwitching Packaging specifications Inner circuit(3)Package TapingTypeCode TLBasic ordering unit (piec

 9.1. Size:158K  rohm
 rtf015n03.pdf

RTF016N05 RTF016N05

2.5V Drive Nch MOSFET RTF015N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT30.85Max.2.00.30.77 Features (3)1) Low On-resistance. 0~0.12) Space saving, small surface mount package (TUMT3). (1) (2)3) Low voltage drive (2.5V drive). 0.170.65 0.651.3(1) Gate(2) SourceAbbreviated symbol : PP Applications (3) DrainSwitching Packagi

 9.2. Size:95K  rohm
 rtf010p02.pdf

RTF016N05 RTF016N05

RTF010P02 Transistors 2.5V Drive Pch MOSFET RTF010P02 Dimensions (Unit : mm) Structure Silicon P-channel TUMT3MOSFET Features 1) Low on-resistance. (570m at 2.5V) 2) High power package. 3) High speed switching. (1) Gate4) Low voltage drive. (2.5V) (2) SourceAbbreviated symbol : WQ(3) Drain Applications DC-DC converter Packaging specifications Equi

 9.3. Size:89K  rohm
 rtf010p02tl.pdf

RTF016N05 RTF016N05

RTF010P02 Transistors DC-DC Converter (-20V, -1.0A) RTF010P02 External dimensions (Unit : mm) Features 1) Low on-resistance. (80m at 2.5V) TUMT32.00.1 0.85MAX2) High power package. 0.770.050.3+0.1-0.053) High speed switching. (3)4) Low voltage drive. (2.5V) 0 to 0.1(1) (2) Applications 0.65 0.650.170.05DC-DC converter 1.30.1Each lead has

 9.4. Size:88K  rohm
 rtf015p02tl.pdf

RTF016N05 RTF016N05

RTF015P02 Transistors DC-DC Converter (-20V, -1.5A) RTF015P02 External dimensions (Unit : mm) Features 1) Low on-resistance. (80m at 2.5V) TUMT32.00.1 0.85MAX2) High power package. 0.770.050.3+0.1-0.053) High speed switching. (3)4) Low voltage drive. (2.5V) 0 to 0.1(1) (2) Applications 0.65 0.650.170.05DC-DC converter 1.30.1Each lead has

 9.5. Size:157K  rohm
 rtf015n03tl.pdf

RTF016N05 RTF016N05

2.5V Drive Nch MOSFET RTF015N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT30.85Max.2.00.30.77 Features (3)1) Low On-resistance. 0~0.12) Space saving, small surface mount package (TUMT3). (1) (2)3) Low voltage drive (2.5V drive). 0.170.65 0.651.3(1) Gate(2) SourceAbbreviated symbol : PP Applications (3) DrainSwitching Packagi

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: BSS816NW

 

 
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