RTF016N05 PDF and Equivalents Search

 

RTF016N05 Specs and Replacement

Type Designator: RTF016N05

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: TUMT3

RTF016N05 substitution

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RTF016N05 datasheet

 ..1. Size:1118K  rohm
rtf016n05.pdf pdf_icon

RTF016N05

Data Sheet 2.5V Drive Nch MOSFET RTF016N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT3 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT3). Abbreviated symbol PU Application Switching Packaging specifications Inner circuit (3) Package Taping Type Code TL Basic ordering unit (piec... See More ⇒

 9.1. Size:158K  rohm
rtf015n03.pdf pdf_icon

RTF016N05

2.5V Drive Nch MOSFET RTF015N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT3 0.85Max. 2.0 0.3 0.77 Features (3) 1) Low On-resistance. 0 0.1 2) Space saving, small surface mount package (TUMT3). (1) (2) 3) Low voltage drive (2.5V drive). 0.17 0.65 0.65 1.3 (1) Gate (2) Source Abbreviated symbol PP Applications (3) Drain Switching Packagi... See More ⇒

 9.2. Size:95K  rohm
rtf010p02.pdf pdf_icon

RTF016N05

RTF010P02 Transistors 2.5V Drive Pch MOSFET RTF010P02 Dimensions (Unit mm) Structure Silicon P-channel TUMT3 MOSFET Features 1) Low on-resistance. (570m at 2.5V) 2) High power package. 3) High speed switching. (1) Gate 4) Low voltage drive. (2.5V) (2) Source Abbreviated symbol WQ (3) Drain Applications DC-DC converter Packaging specifications Equi... See More ⇒

 9.3. Size:89K  rohm
rtf010p02tl.pdf pdf_icon

RTF016N05

RTF010P02 Transistors DC-DC Converter (-20V, -1.0A) RTF010P02 External dimensions (Unit mm) Features 1) Low on-resistance. (80m at 2.5V) TUMT3 2.0 0.1 0.85MAX 2) High power package. 0.77 0.05 0.3+0.1 -0.05 3) High speed switching. (3) 4) Low voltage drive. (2.5V) 0 to 0.1 (1) (2) Applications 0.65 0.65 0.17 0.05 DC-DC converter 1.3 0.1 Each lead has ... See More ⇒

Detailed specifications: RT1A045AP, RT1A050ZP, RT1A060AP, RT1C060UN, RT1E040RP, RT1E050RP, RT1E060XN, RTF015N03, RFP50N06, RTF025N03, RTL035N03, RTQ020N03, RTQ020N05, RTQ035N03, RTQ045N03, RTR020N05, RTR025N03

Keywords - RTF016N05 MOSFET specs

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