RTF025N03 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RTF025N03

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 2.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.048 Ohm

Encapsulados: TUMT3

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RTF025N03 datasheet

 ..1. Size:83K  rohm
 rtf025n03.pdf pdf_icon

RTF025N03

RTF025N03 Transistors 2.5V Drive Nch MOSFET RTF025N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (2.5V drive). (1) Gate (2) Source Abbreviated symbol PL Applications (3) Drain Switching Packaging specifications Inner circuit (3) P

 0.1. Size:940K  rohm
 rtf025n03fra.pdf pdf_icon

RTF025N03

RTF025N03 RTF025N03FRA Transistors AEC-Q101 Qualified 2.5V Drive Nch MOSFET RTF025N03 RTF025N03FRA Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (2.5V drive). (1) Gate (2) Source Abbreviated symbol PL Applications (3) Drain Switching Packag

 0.2. Size:81K  rohm
 rtf025n03tl.pdf pdf_icon

RTF025N03

RTF025N03 Transistors 2.5V Drive Nch MOSFET RTF025N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (2.5V drive). (1) Gate (2) Source Abbreviated symbol PL Applications (3) Drain Switching Packaging specifications Inner circuit (3) P

 9.1. Size:88K  rohm
 rtf020p02tl.pdf pdf_icon

RTF025N03

RTF020P02 Transistors DC-DC Converter (-20V, -2.0A) RTF020P02 External dimensions (Unit mm) Features 1) Low on-resistance. (80m at 2.5V) TUMT3 2.0 0.1 0.85MAX 2) High power package. 0.77 0.05 0.3+0.1 -0.05 3) High speed switching. (3) 4) Low voltage drive. (2.5V) 0 to 0.1 (1) (2) Applications 0.65 0.65 0.17 0.05 DC-DC converter 1.3 0.1 Each lead has

MOSTRAR MÁS

Otros transistores... RT1A050ZP, RT1A060AP, RT1C060UN, RT1E040RP, RT1E050RP, RT1E060XN, RTF015N03, RTF016N05, SI2302, RTL035N03, RTQ020N03, RTQ020N05, RTQ035N03, RTQ045N03, RTR020N05, RTR025N03, RTR025N05