RTF025N03 - Даташиты. Аналоги. Основные параметры

RTF025N03 Transistors 2.5V Drive Nch MOSFET RTF025N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (2.5V drive). (1) Gate(2) SourceAbbreviated symbol : PL Applications(3) DrainSwitching Packaging specifications Inner circuit (3)P

RTF025N03RTF025N03FRATransistorsAEC-Q101 Qualified2.5V Drive Nch MOSFETRTF025N03RTF025N03FRA Structure Dimensions (Unit : mm)Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (2.5V drive). (1) Gate(2) SourceAbbreviated symbol : PL Applications(3) DrainSwitching Packag

RTF025N03 Transistors 2.5V Drive Nch MOSFET RTF025N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (2.5V drive). (1) Gate(2) SourceAbbreviated symbol : PL Applications(3) DrainSwitching Packaging specifications Inner circuit (3)P

RTF020P02 Transistors DC-DC Converter (-20V, -2.0A) RTF020P02 External dimensions (Unit : mm) Features 1) Low on-resistance. (80m at 2.5V) TUMT32.00.1 0.85MAX2) High power package. 0.770.050.3+0.1-0.053) High speed switching. (3)4) Low voltage drive. (2.5V) 0 to 0.1(1) (2) Applications 0.65 0.650.170.05DC-DC converter 1.30.1Each lead has

RTF020P02 Transistors 2.5V Drive Pch MOSFET RTF020P02 Dimensions (Unit : mm) Structure Silicon P-channel TUMT3MOSFET Features 1) Low on-resistance. (120m at 2.5V) 2) High power package. 3) High speed switching. (1) Gate4) Low voltage drive. (2.5V) (2) SourceAbbreviated symbol : WM(3) Drain Applications DC-DC converter Packaging specifications Equi