RTF025N03 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: RTF025N03
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 0.8 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Пороговое напряжение включения |Ugs(th)|: 1.5 V
Максимально допустимый постоянный ток стока |Id|: 2.5 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 15 ns
Выходная емкость (Cd): 70 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.048 Ohm
Тип корпуса: TUMT3
RTF025N03 Datasheet (PDF)
rtf025n03.pdf
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RTF025N03 Transistors 2.5V Drive Nch MOSFET RTF025N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (2.5V drive). (1) Gate(2) SourceAbbreviated symbol : PL Applications(3) DrainSwitching Packaging specifications Inner circuit (3)P
rtf025n03fra.pdf
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RTF025N03RTF025N03FRATransistorsAEC-Q101 Qualified2.5V Drive Nch MOSFETRTF025N03RTF025N03FRA Structure Dimensions (Unit : mm)Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (2.5V drive). (1) Gate(2) SourceAbbreviated symbol : PL Applications(3) DrainSwitching Packag
rtf025n03tl.pdf
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RTF025N03 Transistors 2.5V Drive Nch MOSFET RTF025N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (2.5V drive). (1) Gate(2) SourceAbbreviated symbol : PL Applications(3) DrainSwitching Packaging specifications Inner circuit (3)P
rtf020p02tl.pdf
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RTF020P02 Transistors DC-DC Converter (-20V, -2.0A) RTF020P02 External dimensions (Unit : mm) Features 1) Low on-resistance. (80m at 2.5V) TUMT32.00.1 0.85MAX2) High power package. 0.770.050.3+0.1-0.053) High speed switching. (3)4) Low voltage drive. (2.5V) 0 to 0.1(1) (2) Applications 0.65 0.650.170.05DC-DC converter 1.30.1Each lead has
rtf020p02.pdf
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RTF020P02 Transistors 2.5V Drive Pch MOSFET RTF020P02 Dimensions (Unit : mm) Structure Silicon P-channel TUMT3MOSFET Features 1) Low on-resistance. (120m at 2.5V) 2) High power package. 3) High speed switching. (1) Gate4) Low voltage drive. (2.5V) (2) SourceAbbreviated symbol : WM(3) Drain Applications DC-DC converter Packaging specifications Equi
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
![RTF025N03](https://alltransistors.com/images/us.png)
![RTF025N03](https://alltransistors.com/images/es.png)
![RTF025N03](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C