RTF025N03 MOSFET Datasheet: N-Ch, 30V, 2.5A. Full specification with pinout and replacement list

RTF025N03 Specs and Replacement

Type Designator: RTF025N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm

Package: TUMT3

RTF025N03 substitution

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RTF025N03 datasheet

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RTF025N03 Transistors 2.5V Drive Nch MOSFET RTF025N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (2.5V drive). (1) Gate (2) Source Abbreviated symbol PL Applications (3) Drain Switching Packaging specifications Inner circuit (3) P... See More ⇒

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RTF025N03 RTF025N03FRA Transistors AEC-Q101 Qualified 2.5V Drive Nch MOSFET RTF025N03 RTF025N03FRA Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (2.5V drive). (1) Gate (2) Source Abbreviated symbol PL Applications (3) Drain Switching Packag... See More ⇒

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9.1. Size:88K rohm
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RTF020P02 Transistors DC-DC Converter (-20V, -2.0A) RTF020P02 External dimensions (Unit mm) Features 1) Low on-resistance. (80m at 2.5V) TUMT3 2.0 0.1 0.85MAX 2) High power package. 0.77 0.05 0.3+0.1 -0.05 3) High speed switching. (3) 4) Low voltage drive. (2.5V) 0 to 0.1 (1) (2) Applications 0.65 0.65 0.17 0.05 DC-DC converter 1.3 0.1 Each lead has ... See More ⇒