RTQ035N03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RTQ035N03
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 3.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 90 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.038 Ohm
Paquete / Cubierta: TSMT6
Búsqueda de reemplazo de RTQ035N03 MOSFET
RTQ035N03 Datasheet (PDF)
rtq035n03.pdf

RTQ035N03 Transistors 2.5V Drive Nch MOS FET RTQ035N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.13) Low voltage drive (2.5V drive). (1) (2) (3)1pin mark0.160.4Each lead has same dimensions
rtq035n03tr.pdf

RTQ035N03 Transistors 2.5V Drive Nch MOS FET RTQ035N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.13) Low voltage drive (2.5V drive). (1) (2) (3)1pin mark0.160.4Each lead has same dimensions
rtq035n03fra.pdf

RTQ035N03FRARTQ035N03TransistorsAEC-Q101 Qualified2.5V Drive Nch MOS FET RTQ035N03FRARTQ035N03 Structure External dimensions (Unit : mm)Silicon N-channel MOS FET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.13) Low voltage drive (2.5V drive). (1) (2) (3)1pin mark
rtq035p02fha.pdf

RTQ035P02FHARTQ035P02TransistorAEC-Q101 Qualified2.5V Drive Pch MOS FET RTQ035P02FHARTQ035P02 External dimensions (Unit : mm) StructureSilicon P-channel MOSFETTSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance.(80m at 2.5V) 2) High Power Package. 0~0.1(1) (2) (3)3) High speed switching. 1pin mark4) Low voltage drive.(2.5
Otros transistores... RT1E050RP , RT1E060XN , RTF015N03 , RTF016N05 , RTF025N03 , RTL035N03 , RTQ020N03 , RTQ020N05 , STF13NM60N , RTQ045N03 , RTR020N05 , RTR025N03 , RTR025N05 , RTR030N05 , RTR040N03 , RU1C002UN , RU1C002ZP .
History: AON7702 | SVSP65R110FJDHD4 | SLC500MM20SHN2 | DMC3021LSD | TPH2900ENH | STL130N8F7 | AOD66919
History: AON7702 | SVSP65R110FJDHD4 | SLC500MM20SHN2 | DMC3021LSD | TPH2900ENH | STL130N8F7 | AOD66919



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