All MOSFET. RTQ035N03 Datasheet

 

RTQ035N03 Datasheet and Replacement


   Type Designator: RTQ035N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: TSMT6
 

 RTQ035N03 substitution

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RTQ035N03 Datasheet (PDF)

 ..1. Size:55K  rohm
 rtq035n03.pdf pdf_icon

RTQ035N03

RTQ035N03 Transistors 2.5V Drive Nch MOS FET RTQ035N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.13) Low voltage drive (2.5V drive). (1) (2) (3)1pin mark0.160.4Each lead has same dimensions

 0.1. Size:53K  rohm
 rtq035n03tr.pdf pdf_icon

RTQ035N03

RTQ035N03 Transistors 2.5V Drive Nch MOS FET RTQ035N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.13) Low voltage drive (2.5V drive). (1) (2) (3)1pin mark0.160.4Each lead has same dimensions

 0.2. Size:913K  rohm
 rtq035n03fra.pdf pdf_icon

RTQ035N03

RTQ035N03FRARTQ035N03TransistorsAEC-Q101 Qualified2.5V Drive Nch MOS FET RTQ035N03FRARTQ035N03 Structure External dimensions (Unit : mm)Silicon N-channel MOS FET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.13) Low voltage drive (2.5V drive). (1) (2) (3)1pin mark

 8.1. Size:1036K  rohm
 rtq035p02fha.pdf pdf_icon

RTQ035N03

RTQ035P02FHARTQ035P02TransistorAEC-Q101 Qualified2.5V Drive Pch MOS FET RTQ035P02FHARTQ035P02 External dimensions (Unit : mm) StructureSilicon P-channel MOSFETTSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance.(80m at 2.5V) 2) High Power Package. 0~0.1(1) (2) (3)3) High speed switching. 1pin mark4) Low voltage drive.(2.5

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Datasheet: RT1E050RP , RT1E060XN , RTF015N03 , RTF016N05 , RTF025N03 , RTL035N03 , RTQ020N03 , RTQ020N05 , IRF520 , RTQ045N03 , RTR020N05 , RTR025N03 , RTR025N05 , RTR030N05 , RTR040N03 , RU1C002UN , RU1C002ZP .

History: SIJ478DP | 2SK3557-7-TB-E | SIR158DP | IRF7307 | SCH1332 | 2SK1647L | SCH1331

Keywords - RTQ035N03 MOSFET datasheet

 RTQ035N03 cross reference
 RTQ035N03 equivalent finder
 RTQ035N03 lookup
 RTQ035N03 substitution
 RTQ035N03 replacement

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