RUE002N05 Todos los transistores

 

RUE002N05 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RUE002N05
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 6 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm
   Paquete / Cubierta: EMT3 SC75A SOT416
 

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RUE002N05 Datasheet (PDF)

 ..1. Size:176K  rohm
 rue002n05.pdf pdf_icon

RUE002N05

1.2V Drive Nch MOSFET RUE002N05 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET EMT3(SC-75A)Features1) High speed switing.2) Small package(EMT3).3)Ultra low voltage drive(1.2V drive).Abbreviated symbol : RH ApplicationSwitching Packaging specifications Inner circuitPackage Taping(3)TypeCode TLBasic ordering unit (pieces)

 6.1. Size:216K  rohm
 rue002n02.pdf pdf_icon

RUE002N05

1.2V Drive Nch MOSFET RUE002N02 Structure Dimensions (Unit : mm) Silicon N-channel EMT3MOSFET Applications Switching (1)Source Features (2)Gate(3)Drain Abbreviated symbol : QR1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Packa

 6.2. Size:215K  ruichips
 rue002n02tl.pdf pdf_icon

RUE002N05

1.2V Drive Nch MOSFET RUE002N02 Structure Dimensions (Unit : mm) Silicon N-channel EMT3MOSFET Applications Switching (1)Source Features (2)Gate(3)Drain Abbreviated symbol : QR1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Packa

 9.1. Size:934K  rohm
 rue003n02.pdf pdf_icon

RUE002N05

1.8V Drive Nch MOSFET RUE003N02 Structure Dimensions (Unit : mm) Silicon N-channel EMT3MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipment. (1)Source4) Drive circuits can be simple. (2)Gate(3)Drain Abbreviated symbol : QT5) Parallel use is easy. Applications Switch

MOSTRAR MÁS

Otros transistores... RTR030N05 , RTR040N03 , RU1C002UN , RU1C002ZP , RU1E002SP , RU1L002SN , RUC002N05 , RUE002N02 , RU7088R , RUF015N02 , RUF020N02 , RUF025N02 , RUL035N02 , RUM002N02 , RUM002N05 , RUQ050N02 , RUR020N02 .

History: IPA65R065C7 | SUU10P10-195 | NVMFS6B14NL

 

 
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