All MOSFET. RUE002N05 Datasheet

 

RUE002N05 MOSFET. Datasheet pdf. Equivalent


   Type Designator: RUE002N05
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 0.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 6 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: EMT3 SC75A SOT416

 RUE002N05 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RUE002N05 Datasheet (PDF)

 ..1. Size:176K  rohm
 rue002n05.pdf

RUE002N05 RUE002N05

1.2V Drive Nch MOSFET RUE002N05 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET EMT3(SC-75A)Features1) High speed switing.2) Small package(EMT3).3)Ultra low voltage drive(1.2V drive).Abbreviated symbol : RH ApplicationSwitching Packaging specifications Inner circuitPackage Taping(3)TypeCode TLBasic ordering unit (pieces)

 6.1. Size:216K  rohm
 rue002n02.pdf

RUE002N05 RUE002N05

1.2V Drive Nch MOSFET RUE002N02 Structure Dimensions (Unit : mm) Silicon N-channel EMT3MOSFET Applications Switching (1)Source Features (2)Gate(3)Drain Abbreviated symbol : QR1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Packa

 6.2. Size:215K  ruichips
 rue002n02tl.pdf

RUE002N05 RUE002N05

1.2V Drive Nch MOSFET RUE002N02 Structure Dimensions (Unit : mm) Silicon N-channel EMT3MOSFET Applications Switching (1)Source Features (2)Gate(3)Drain Abbreviated symbol : QR1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Packa

 9.1. Size:934K  rohm
 rue003n02.pdf

RUE002N05 RUE002N05

1.8V Drive Nch MOSFET RUE003N02 Structure Dimensions (Unit : mm) Silicon N-channel EMT3MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipment. (1)Source4) Drive circuits can be simple. (2)Gate(3)Drain Abbreviated symbol : QT5) Parallel use is easy. Applications Switch

 9.2. Size:921K  ruichips
 rue003n02tl.pdf

RUE002N05 RUE002N05

1.8V Drive Nch MOSFET RUE003N02 Structure Dimensions (Unit : mm) Silicon N-channel EMT3MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipment. (1)Source4) Drive circuits can be simple. (2)Gate(3)Drain Abbreviated symbol : QT5) Parallel use is easy. Applications Switch

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FQP8N60C

 

 
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