RUE002N05 MOSFET Datasheet: N-Ch, 50V, 0.2A. Full specification with pinout and replacement list

RUE002N05 Specs and Replacement

Type Designator: RUE002N05

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm

Package: EMT3 SC75A SOT416

RUE002N05 substitution

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RUE002N05 datasheet

..1. Size:176K rohm
rue002n05.pdf pdf_icon

1.2V Drive Nch MOSFET RUE002N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET EMT3 (SC-75A) Features 1) High speed switing. 2) Small package(EMT3). 3)Ultra low voltage drive(1.2V drive). Abbreviated symbol RH Application Switching Packaging specifications Inner circuit Package Taping (3) Type Code TL Basic ordering unit (pieces)... See More ⇒

6.1. Size:216K rohm
rue002n02.pdf pdf_icon

1.2V Drive Nch MOSFET RUE002N02 Structure Dimensions (Unit mm) Silicon N-channel EMT3 MOSFET Applications Switching (1)Source Features (2)Gate (3)Drain Abbreviated symbol QR 1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Packa... See More ⇒

6.2. Size:215K ruichips
rue002n02tl.pdf pdf_icon

9.1. Size:934K rohm
rue003n02.pdf pdf_icon

1.8V Drive Nch MOSFET RUE003N02 Structure Dimensions (Unit mm) Silicon N-channel EMT3 MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipment. (1)Source 4) Drive circuits can be simple. (2)Gate (3)Drain Abbreviated symbol QT 5) Parallel use is easy. Applications Switch... See More ⇒