Справочник MOSFET. RUE002N05

 

RUE002N05 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RUE002N05
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.15 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 6 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.6 Ohm
   Тип корпуса: EMT3 SC75A SOT416

 Аналог (замена) для RUE002N05

 

 

RUE002N05 Datasheet (PDF)

 ..1. Size:176K  rohm
 rue002n05.pdf

RUE002N05 RUE002N05

1.2V Drive Nch MOSFET RUE002N05 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET EMT3(SC-75A)Features1) High speed switing.2) Small package(EMT3).3)Ultra low voltage drive(1.2V drive).Abbreviated symbol : RH ApplicationSwitching Packaging specifications Inner circuitPackage Taping(3)TypeCode TLBasic ordering unit (pieces)

 6.1. Size:216K  rohm
 rue002n02.pdf

RUE002N05 RUE002N05

1.2V Drive Nch MOSFET RUE002N02 Structure Dimensions (Unit : mm) Silicon N-channel EMT3MOSFET Applications Switching (1)Source Features (2)Gate(3)Drain Abbreviated symbol : QR1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Packa

 6.2. Size:215K  ruichips
 rue002n02tl.pdf

RUE002N05 RUE002N05

1.2V Drive Nch MOSFET RUE002N02 Structure Dimensions (Unit : mm) Silicon N-channel EMT3MOSFET Applications Switching (1)Source Features (2)Gate(3)Drain Abbreviated symbol : QR1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Packa

 9.1. Size:934K  rohm
 rue003n02.pdf

RUE002N05 RUE002N05

1.8V Drive Nch MOSFET RUE003N02 Structure Dimensions (Unit : mm) Silicon N-channel EMT3MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipment. (1)Source4) Drive circuits can be simple. (2)Gate(3)Drain Abbreviated symbol : QT5) Parallel use is easy. Applications Switch

 9.2. Size:921K  ruichips
 rue003n02tl.pdf

RUE002N05 RUE002N05

1.8V Drive Nch MOSFET RUE003N02 Structure Dimensions (Unit : mm) Silicon N-channel EMT3MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipment. (1)Source4) Drive circuits can be simple. (2)Gate(3)Drain Abbreviated symbol : QT5) Parallel use is easy. Applications Switch

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