XP151A13COMR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: XP151A13COMR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 2.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 36 nS
Cossⓘ - Capacitancia de salida: 115 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de XP151A13COMR MOSFET
XP151A13COMR Datasheet (PDF)
xp151a13comr.pdf

XP151A13COMR20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.6A 85m RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 115m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions DGSSOT-23(PACKAGE)Millimeter MillimeterREF. REF. Min.Max. Min. Max.A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H
xp151a13a0mr.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N-Channel Power MOS FET Applications Notebook PCs DMOS Structure Cellular and portable phones Low On-State Resistance : 0.1 (max) On - board power supplies Ultra High-Speed Switching Li - ion battery systems Gate Protect Diode Built-in
xp151a13a0mr-g.pdf

Product specificationXP151A13A0MR-G Power MOSFET GENERAL DESCRIPTION The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package m
xp151a13a0mr-g.pdf

XP151A13A0MR-G ETR1119_003Power MOSFET GENERAL DESCRIPTION The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high
Otros transistores... 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , 2P7234A-5 , SI2300 , SI2302 , SI2312 , P0903BDG , AO3400 , PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 .
History: MTD06N04Q8 | CEB02N6G | SMF20N65
History: MTD06N04Q8 | CEB02N6G | SMF20N65



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