XP151A13COMR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: XP151A13COMR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.25 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 8 V

Corriente continua de drenaje (Id): 2.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 36 nS

Conductancia de drenaje-sustrato (Cd): 115 pF

Resistencia drenaje-fuente RDS(on): 0.085 Ohm

Empaquetado / Estuche: SOT23

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XP151A13COMR Datasheet (PDF)

1.1. xp151a13comr.pdf Size:2261K _htsemi

XP151A13COMR 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.6A 85m Ω RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 115m Ω Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23(PACKAGE) Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H

2.1. xp151a13a0mr-g.pdf Size:306K _update_mosfet

XP151A13A0MR-G ETR1119_003 Power MOSFET ■GENERAL DESCRIPTION The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high

2.2. xp151a13a0mr.pdf Size:358K _shenzhen

Shenzhen Tuofeng Semiconductor Technology Co., Ltd ◆ ■ N-Channel Power MOS FET Applications ◆ ● Notebook PCs DMOS Structure ● Cellular and portable phones ◆ Low On-State Resistance : 0.1Ω (max) ◆ ● On - board power supplies Ultra High-Speed Switching ◆ ● Li - ion battery systems Gate Protect Diode Built-in ◆

2.3. xp151a13a0mr-g.pdf Size:95K _tysemi

Product specification XP151A13A0MR-G Power MOSFET ■GENERAL DESCRIPTION The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package m

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