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XP151A13COMR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: XP151A13COMR

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 1.25 W

Предельно допустимое напряжение сток-исток (Uds): 20 V

Предельно допустимое напряжение затвор-исток (Ugs): 8 V

Максимально допустимый постоянный ток стока (Id): 2.3 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 36 ns

Выходная емкость (Cd): 115 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.085 Ohm

Тип корпуса: SOT23

Аналог (замена) для XP151A13COMR

 

 

XP151A13COMR Datasheet (PDF)

1.1. xp151a13comr.pdf Size:2261K _htsemi

XP151A13COMR
XP151A13COMR

XP151A13COMR 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.6A 85m ? RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 115m ? Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23(PACKAGE) Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.

2.1. xp151a13a0mr-g.pdf Size:306K _update_mosfet

XP151A13COMR
XP151A13COMR

XP151A13A0MR-G ETR1119_003 Power MOSFET ■GENERAL DESCRIPTION The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high

2.2. xp151a13a0mr-g.pdf Size:95K _tysemi

XP151A13COMR
XP151A13COMR

Product specification XP151A13A0MR-G Power MOSFET ■GENERAL DESCRIPTION The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package m

 2.3. xp151a13a0mr.pdf Size:358K _shenzhen-tuofeng-semi

XP151A13COMR
XP151A13COMR

Shenzhen Tuofeng Semiconductor Technology Co., Ltd ◆ ■ N-Channel Power MOS FET Applications ◆ ● Notebook PCs DMOS Structure ● Cellular and portable phones ◆ Low On-State Resistance : 0.1Ω (max) ◆ ● On - board power supplies Ultra High-Speed Switching ◆ ● Li - ion battery systems Gate Protect Diode Built-in ◆

Другие MOSFET... GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , IRF250 , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL .

 

 
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