XP151A13COMR MOSFET. Datasheet pdf. Equivalent
Type Designator: XP151A13COMR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1.25 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 8 V
Maximum Drain Current |Id|: 2.3 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 36 nS
Drain-Source Capacitance (Cd): 115 pF
Maximum Drain-Source On-State Resistance (Rds): 0.085 Ohm
Package: SOT23
XP151A13COMR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
XP151A13COMR Datasheet (PDF)
1.1. xp151a13comr.pdf 
Size:2261K _htsemi
XP151A13COMR 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.6A 85m ? RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 115m ? Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23(PACKAGE) Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.
2.1. xp151a13a0mr-g.pdf Size:95K _tysemi
Product specification XP151A13A0MR-G Power MOSFET ■GENERAL DESCRIPTION The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package m
2.2. xp151a13a0mr.pdf Size:358K _shenzhen-tuofeng-semi
Shenzhen Tuofeng Semiconductor Technology Co., Ltd ◆ ■ N-Channel Power MOS FET Applications ◆ ● Notebook PCs DMOS Structure ● Cellular and portable phones ◆ Low On-State Resistance : 0.1Ω (max) ◆ ● On - board power supplies Ultra High-Speed Switching ◆ ● Li - ion battery systems Gate Protect Diode Built-in ◆
Datasheet: 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , 2P7234A-5 , SI2300 , SI2302 , SI2312 , IRF640N , AO3400 , PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 .
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