XP151A13COMR MOSFET Datasheet: N-Ch, 20V, 2.3A. Full specification with pinout and replacement list

XP151A13COMR Specs and Replacement

   Type Designator: XP151A13COMR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 2.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOT23

XP151A13COMR substitution

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XP151A13COMR datasheet

..1. Size:2261K htsemi
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XP151A13COMR 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.6A 85m RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 115m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23(PACKAGE) Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H ... See More ⇒

6.1. Size:358K shenzhen
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd N-Channel Power MOS FET Applications Notebook PCs DMOS Structure Cellular and portable phones Low On-State Resistance 0.1 (max) On - board power supplies Ultra High-Speed Switching Li - ion battery systems Gate Protect Diode Built-in ... See More ⇒

6.2. Size:95K tysemi
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Product specification XP151A13A0MR-G Power MOSFET GENERAL DESCRIPTION The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package m... See More ⇒

6.3. Size:306K torex
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XP151A13A0MR-G ETR1119_003 Power MOSFET GENERAL DESCRIPTION The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high ... See More ⇒

Detailed specifications: 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , 2P7234A-5 , SI2300 , SI2302 , SI2312 , IRF1407 , AO3400 , PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 .