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AO3400 30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@5.8A

AO3400 N-Channel 30V(D-S) MOSFET DESCRIPTION The 3400 uses advanced trench technology to provide D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G Battery protection or in other Switching application. S GENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) RDS(ON) ID @ 4.5V (Typ) @ 2.5V (Typ) @ 1

AO3400 30V N-Channel MOSFET General Description Product Summary VDS 30V The AO3400 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 5.8A extremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V)

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3400 AO3400 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3400 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate charge and ID = 4.8 A (VGS = 10V) operation with gate voltages as low as 2.5V. This RDS(ON)

AO3400 Rev.B Oct.-2017 DATA SHEET / Descriptions SOT23-3 N MOS N- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON)

SMD Type IC SMD Type MOSFET N-Channel Enhancement Mode Field Effect Transistor KO3400(AO3400) SOT-23 Unit mm +0.1 Features 2.9-0.1 +0.1 0.4-0.1 VDS (V) = 30V 3 ID =5.8 A(VGS =10V) RDS(ON) 28m (VGS = 10V) 12 RDS(ON) 33m (VGS =4.5V) +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 RDS(ON) 52m (VGS =2.5V) 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maxim

SMD Type IC SMD Type MOSFET N-Channel Enhancement Mode Field Effect Transistor AO3400 (KO3400) SOT-23 Unit mm +0.1 Features 2.9 -0.1 +0.1 0.4 -0.1 VDS (V) = 30V 3 ID = 5.8 A (VGS = 10V) RDS(ON) 28m (VGS = 10V) 1 2 RDS(ON) 33m (VGS = 4.5V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 RDS(ON) 52m (VGS = 2.5V) 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Ab

Plastic-Encapsulate Mosfets AO3400 FEATURES N-Channel MOSFET The AO3400 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook c

AO3400 30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@5.8A

N-Channel Enhancement Mode MOSFET Feature SC-59 30V/5.8A, RDS(ON) = 35m (MAX) @VGS = 10V. 3 RDS(ON) =40m (MAX) @VGS = 4.5V. RDS(ON) =55m (MAX) @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON) . 2 Reliable and Rugged. 1 SC-59 for Surface Mount Package. Applications 1 Gate 2 Source 3 Drain Power Management Portable Equipment and

SHENZHEN LONG JING MICRO-ELECTRONICS CO., LTD. SOT-23 Plastic-Encapsulate Mosfets AO3400 N-Channel Mosfet Features 30V VDS 5.7A I (at VGS=10V D (at VGS=10V

AO3400 AO3400 AO3400 AO3400 SI2305 SOT-23 Plastic-Encapsulate MOSFETS N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor AO3400 AO3400 AO3400 AO3400 AO3400 FEATURE High dense cell design for extremely low RDS(ON) Excepti

AO3400 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G 1

AO3400C 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=4.5V) 6.2A Low Gate Charge RDS(ON) (at VGS=10V)

SMD Type MOSFET N-Channel MOSFET AO3400A (KO3400A) SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features VDS (V) = 30V ID = 5.7 A (VGS = 10V) 1 2 RDS(ON) 26.5m (VGS = 10V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 RDS(ON) 32m (VGS = 4.5V) RDS(ON) 48m (VGS = 2.5V) 1. Gate 2. Source 3. Drain D D G G S S Absolute

SMD Type IC SMD Type MOSFET N-Channel Enhancement MOSFET AO3400 (KO3400) SOT-23-3 Unit mm +0.2 2.9 -0.1 Features +0.1 0.4-0.1 3 VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) 28m (VGS = 10V) 1 2 RDS(ON) 33m (VGS = 4.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 RDS(ON) 52m (VGS = 2.5V) D +0.1 1.9 -0.2 1. Gate 2. Source G S 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Sy

SMD Type MOSFET N-Channel MOSFET AO3400A (KO3400A) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = 30V ID = 5.7 A (VGS = 10V) RDS(ON) 26.5m (VGS = 10V) 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 RDS(ON) 32m (VGS = 4.5V) +0.1 1.9 -0.2 RDS(ON) 48m (VGS = 2.5V) 1. Gate 2. Source D D 3. Drain G G S S Absol

R UMW UMW AO3400A UMW AO3400A N-Channel Enhancement Mode Features SOT 23 VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) 28m (VGS = 10V) RDS(ON) 33m (VGS = 4.5V) RDS(ON) 52m (VGS = 2.5V) 1. GATE 2. SOURCE 3. DRAIN Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 12 V Continuous Drain Current TA=25 5.8 ID

AO3400A MOSFET ROHS N-Channel Enhancement-Mode MOSFET SOT-23 - Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance MAXIMUM RANTINGS Characteristic Symbol Max Unit Drain-Source Voltage BV 30 V DSS Gate- Source Voltage V +12 V GS Drain Current (continuous) 5.8 A I D Drain Current (pulsed) I 30 A DM Total Device Dissipat

AO3400A N-Ch 30V Fast Switching MOSFETs Description Product Summary The AO3400A is the high cell density trenched N- VDS 30 V ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching RDS(ON),typ 27 m and load switch applications. ID 5.2 A The AO3400A meet the RoHS and Green Product requirement with full function reliability approve

www.msksemi.com AO3400MI-MS Semiconductor Compiance SOT-23 FEATURE High dense cell design for extremely low R DS(ON) Exceptional on-resistance and maximum DC current capability 1. GATE 2. SOURCE APPLICATION 3. DRAIN Load/Power Switching Interfacing Switching Equivalent Circuit I V(BR)DSS RDS(on)MAX D 35m @ 10V 40m @4.5V 30 V 5.8A 52m @2.5V Maximum ratin

Description The AO3400S combines advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a load switch or other general applications. Features VDS=30V, ID=5.1A RDS(ON)