Справочник MOSFET. AO3400

 

AO3400 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AO3400
   Маркировка: A01TF_A09T
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 1.4 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
   Пороговое напряжение включения |Ugs(th)|: 1.45 V
   Максимально допустимый постоянный ток стока |Id|: 5.8 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 15 ns
   Выходная емкость (Cd): 115 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.028 Ohm
   Тип корпуса: SOT23

 Аналог (замена) для AO3400

 

 

AO3400 Datasheet (PDF)

 ..1. Size:1848K  htsemi
ao3400.pdf

AO3400 AO3400

AO340030V N-Channel Enhancement Mode MOSFETVDS= 30V RDS(ON), Vgs@10V, Ids@5.8A

 ..2. Size:2141K  lge
ao3400.pdf

AO3400 AO3400

AO3400N-Channel 30V(D-S) MOSFETDESCRIPTION The 3400 uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a GBattery protection or in other Switching application. SGENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) RDS(ON) ID @4.5V (Typ) @ 2.5V (Typ) @ 1

 ..3. Size:472K  aosemi
ao3400.pdf

AO3400 AO3400

AO340030V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO3400 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 5.8Aextremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V)

 ..4. Size:1266K  shenzhen
ao3400.pdf

AO3400 AO3400

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3400AO3400N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3400 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge and ID = 4.8 A (VGS = 10V)operation with gate voltages as low as 2.5V. This RDS(ON)

 ..5. Size:781K  blue-rocket-elect
ao3400.pdf

AO3400 AO3400

AO3400 Rev.B Oct.-2017 DATA SHEET / Descriptions SOT23-3 N MOS N- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON)

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ko3400 ao3400.pdf

AO3400 AO3400

SMD Type ICSMD Type MOSFETN-Channel Enhancement ModeField Effect TransistorKO3400(AO3400)SOT-23Unit: mm+0.1Features 2.9-0.1+0.10.4-0.1VDS (V) = 30V3ID =5.8 A(VGS =10V)RDS(ON) 28m (VGS = 10V)12RDS(ON) 33m (VGS =4.5V)+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1RDS(ON) 52m (VGS =2.5V)1.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maxim

 ..7. Size:1115K  kexin
ao3400.pdf

AO3400 AO3400

SMD Type ICSMD Type MOSFETN-Channel Enhancement ModeField Effect TransistorAO3400 (KO3400)SOT-23Unit: mm+0.1Features 2.9 -0.1+0.10.4 -0.1VDS (V) = 30V3ID = 5.8 A (VGS = 10V)RDS(ON) 28m (VGS = 10V)1 2RDS(ON) 33m (VGS = 4.5V)+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1RDS(ON) 52m (VGS = 2.5V)1.Base1. Gate2.Emitter2. Source3. Drain3.collectorAb

 ..8. Size:591K  guangdong hottech
ao3400.pdf

AO3400 AO3400

Plastic-Encapsulate MosfetsAO3400FEATURESN-Channel MOSFETThe AO3400 is the N-Channel logic enhancement mode powerfield effect transistor is produced using high cell density, DMOStrench technology.This high-density process is especially tailored to minimize on-stateresistance. These devices are particularly suited for low voltage applicationsuch as cellular phone and notebook c

 ..9. Size:1535K  cn puolop
ao3400.pdf

AO3400 AO3400

AO3400 30V N-Channel Enhancement Mode MOSFETVDS= 30V RDS(ON), Vgs@10V, Ids@5.8A

 ..10. Size:656K  cn shikues
ao3400.pdf

AO3400 AO3400

N-Channel Enhancement Mode MOSFET Feature SC-59 30V/5.8A, RDS(ON) = 35m(MAX) @VGS = 10V. 3 RDS(ON) =40m(MAX) @VGS = 4.5V. RDS(ON) =55m(MAX) @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON) . 2 Reliable and Rugged. 1 SC-59 for Surface Mount Package. Applications 1Gate 2Source 3Drain Power Management Portable Equipment and

 ..11. Size:1973K  cn twgmc
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AO3400 AO3400

AO3400AO3400AO3400AO3400SI2305SOT-23 Plastic-Encapsulate MOSFETS N-Channel Enhancement Mode Field Effect TransistorN-Channel Enhancement Mode Field Effect TransistorN-Channel Enhancement Mode Field Effect TransistorN-Channel Enhancement Mode Field Effect TransistorAO3400AO3400AO3400AO3400AO3400FEATURE High dense cell design for extremely low RDS(ON) Excepti

 ..12. Size:849K  cn vbsemi
ao3400.pdf

AO3400 AO3400

AO3400www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G 1

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ao3400.pdf

AO3400 AO3400

 0.1. Size:471K  aosemi
ao3400a.pdf

AO3400 AO3400

AO3400A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO3400A combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 5.7Aextremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V)

 0.2. Size:342K  aosemi
ao3400c.pdf

AO3400 AO3400

AO3400C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=4.5V) 6.2A Low Gate Charge RDS(ON) (at VGS=10V)

 0.3. Size:1866K  kexin
ao3400a.pdf

AO3400 AO3400

SMD Type MOSFETN-Channel MOSFETAO3400A (KO3400A)SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features VDS (V) = 30V ID = 5.7 A (VGS = 10V)1 2 RDS(ON) 26.5m (VGS = 10V)+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 RDS(ON) 32m (VGS = 4.5V) RDS(ON) 48m (VGS = 2.5V)1. Gate2. Source3. DrainDDG GSS Absolute

 0.4. Size:1190K  kexin
ao3400-3.pdf

AO3400 AO3400

SMD Type ICSMD Type MOSFETN-Channel Enhancement MOSFETAO3400 (KO3400)SOT-23-3Unit: mm+0.22.9 -0.1Features+0.10.4-0.13VDS (V) = 30VID = 5.8 A (VGS = 10V)RDS(ON) 28m (VGS = 10V)1 2RDS(ON) 33m (VGS = 4.5V)+0.02+0.10.15 -0.020.95 -0.1RDS(ON) 52m (VGS = 2.5V) D+0.11.9 -0.21. Gate2. SourceGS 3. DrainAbsolute Maximum Ratings Ta = 25Parameter Sy

 0.5. Size:1871K  kexin
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AO3400 AO3400

SMD Type MOSFETN-Channel MOSFETAO3400A (KO3400A)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) = 30V ID = 5.7 A (VGS = 10V) RDS(ON) 26.5m (VGS = 10V) 1 2+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 32m (VGS = 4.5V)+0.11.9 -0.2 RDS(ON) 48m (VGS = 2.5V)1. Gate2. SourceDD3. DrainG GSS Absol

 0.6. Size:1508K  umw-ic
ao3400a.pdf

AO3400 AO3400

RUMWUMW AO3400AUMW AO3400AN-Channel Enhancement ModeFeaturesSOT23 VDS (V) = 30VID = 5.8 A (VGS = 10V)RDS(ON) 28m (VGS = 10V)RDS(ON) 33m (VGS = 4.5V)RDS(ON) 52m (VGS = 2.5V)1. GATE 2. SOURCE 3. DRAIN Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS 30 VGate-Source Voltage VGS 12 VContinuous Drain Current TA=25 5.8ID

 0.7. Size:2049K  born
ao3400a.pdf

AO3400 AO3400

AO3400AMOSFET ROHSN-Channel Enhancement-Mode MOSFET SOT-23-FeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceMAXIMUM RANTINGSCharacteristic Symbol Max UnitDrain-Source Voltage BV 30 VDSSGate- Source VoltageV +12 VGSDrain Current (continuous) 5.8 AIDDrain Current (pulsed) I 30 ADMTotal Device Dissipat

 0.8. Size:407K  huashuo
ao3400a.pdf

AO3400 AO3400

AO3400A N-Ch 30V Fast Switching MOSFETs Description Product Summary The AO3400A is the high cell density trenched N-VDS 30 V ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching RDS(ON),typ 27 m and load switch applications. ID 5.2 A The AO3400A meet the RoHS and Green Product requirement with full function reliability approve

 0.9. Size:602K  msksemi
ao3400mi-ms.pdf

AO3400 AO3400

www.msksemi.comAO3400MI-MSSemiconductor CompianceSOT-23FEATURE High dense cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability1. GATE2. SOURCEAPPLICATION3. DRAIN Load/Power Switching Interfacing SwitchingEquivalent CircuitIV(BR)DSS RDS(on)MAX D35m@ 10V40m@4.5V30 V5.8A52m@2.5VMaximum ratin

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