All MOSFET. AO3400 Datasheet

 

AO3400 MOSFET. Datasheet pdf. Equivalent

Type Designator: AO3400

SMD Transistor Code: A01TF_A09T

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.4 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.45 V

Maximum Drain Current |Id|: 5.8 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 15 nS

Drain-Source Capacitance (Cd): 115 pF

Maximum Drain-Source On-State Resistance (Rds): 0.028 Ohm

Package: SOT233L

AO3400 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AO3400 Datasheet (PDF)

1.1. ao3400.pdf Size:1848K _htsemi

AO3400
AO3400

AO3400 30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@5.8A < 28m? RDS(ON), Vgs@4.5V, Ids@5.0A < 33m? RDS(ON), Vgs@2.5V, Ids@4.0A < 52m? Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D SOT-23-3L G S Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF. B

1.2. ao3400a.pdf Size:471K _aosemi

AO3400
AO3400

AO3400A 30V N-Channel MOSFET General Description Product Summary VDS 30V The AO3400A combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 5.7A extremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V) < 26.5mΩ load switch or in PWM applications. RDS(ON) (at VGS = 4.5V) < 32mΩ RDS(ON) (at VGS = 2.5V) < 48m

1.3. ao3400.pdf Size:472K _aosemi

AO3400
AO3400

AO3400 30V N-Channel MOSFET General Description Product Summary VDS 30V The AO3400 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 5.8A extremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V) < 28mΩ load switch or in PWM applications. RDS(ON) (at VGS = 4.5V) < 33mΩ RDS(ON) (at VGS = 2.5V) < 52mΩ

1.4. ao3400.pdf Size:771K _blue-rocket-elect

AO3400
AO3400

AO3400(BRCS3400M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 N 道 MOS 晶体管。N- CHANNEL MOSFET in a SOT-23 Plastic Package. 特征 / Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) < 28mΩ (VGS = 10V) RDS(ON) < 33mΩ (VGS = 4.5V) RDS(ON) < 52mΩ (VGS = 2.5V) 用途 / Applications 适用于作负载开关或脉宽调制应用。 Th

1.5. ao3400a-3.pdf Size:1871K _kexin

AO3400
AO3400

SMD Type MOSFET N-Channel MOSFET AO3400A (KO3400A) SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● VDS (V) = 30V ● ID = 5.7 A (VGS = 10V) ● RDS(ON) < 26.5mΩ (VGS = 10V) 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 ● RDS(ON) < 32mΩ (VGS = 4.5V) +0.1 1.9 -0.2 ● RDS(ON) < 48mΩ (VGS = 2.5V) 1. Gate 2. Source D D 3. Drain G G S S ■ Absol

1.6. ao3400a.pdf Size:1866K _kexin

AO3400
AO3400

SMD Type MOSFET N-Channel MOSFET AO3400A (KO3400A) SOT-23 Unit: mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 ■ Features ● VDS (V) = 30V ● ID = 5.7 A (VGS = 10V) 1 2 ● RDS(ON) < 26.5mΩ (VGS = 10V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 ● RDS(ON) < 32mΩ (VGS = 4.5V) ● RDS(ON) < 48mΩ (VGS = 2.5V) 1. Gate 2. Source 3. Drain D D G G S S ■ Absolute

1.7. ao3400-3.pdf Size:1190K _kexin

AO3400
AO3400

SMD Type IC SMD Type MOSFET N-Channel Enhancement MOSFET AO3400 (KO3400) SOT-23-3 Unit: mm +0.2 2.9 -0.1 Features +0.1 0.4-0.1 3 VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) 28m (VGS = 10V) 1 2 RDS(ON) 33m (VGS = 4.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 RDS(ON) 52m (VGS = 2.5V) D +0.1 1.9 -0.2 1. Gate 2. Source G S 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Sy

1.8. ao3400.pdf Size:1115K _kexin

AO3400
AO3400

SMD Type IC SMD Type MOSFET N-Channel Enhancement Mode Field Effect Transistor AO3400 (KO3400) SOT-23 Unit: mm +0.1 Features 2.9 -0.1 +0.1 0.4 -0.1 VDS (V) = 30V 3 ID = 5.8 A (VGS = 10V) RDS(ON) 28m (VGS = 10V) 1 2 RDS(ON) 33m (VGS = 4.5V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 RDS(ON) 52m (VGS = 2.5V) 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Ab

1.9. ao3400.pdf Size:1266K _shenzhen-tuofeng-semi

AO3400
AO3400

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3400 AO3400 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3400 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate charge and ID = 4.8 A (VGS = 10V) operation with gate voltages as low as 2.5V. This RDS(ON) < 40mΩ (VGS = 10V) device is suitable for use as

Datasheet: 2P7233A-5 , 2P7209A , 2P7234A , 2P7234A-5 , SI2300 , SI2302 , SI2312 , XP151A13COMR , IRF9530 , PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR .

 


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