SMG2314N MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SMG2314N datasheet

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smg2314n.pdf pdf_icon

SMG2314N 5.3A , 20V , RDS(ON) 32 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs A utilize a high cell density trench process to provide low L 3 RDS(ON) and to ensure minimal power loss and heat dissipation. 3 Top View C

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smg2314ne.pdf pdf_icon

SMG2314NE 4 A, 20 V, RDS(ON) 32 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and A L conserves energy, making this device ideal for use in power

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smg2318n.pdf pdf_icon

SMG2318N 1.2 A, 30 V, RDS(ON) 160 m N-Channel Logic Level MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to A L ensure minimal power loss and heat dissipation. 3 3 T

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smg2310a.pdf pdf_icon

SMG2310A N-Ch Enhancement Mode Power MOSFET 5.0 A, 60 V, RDS(ON)=115 m Elektronische Bauelemente sRoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTIONS A The SMG2310A utilized advanced processing techniques to achieve the L lowest possible on-resistance, extremely efficient and cost-effectiveness 3 3 device. The SMG2310A is univers