SMG2314N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SMG2314N
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1.3 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Максимально допустимый постоянный ток стока |Id|: 5.3 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 24 ns
Сопротивление сток-исток открытого транзистора (Rds): 0.032 Ohm
Тип корпуса: SC59
SMG2314N Datasheet (PDF)
smg2314n.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SMG2314N 5.3A , 20V , RDS(ON) 32 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs Autilize a high cell density trench process to provide low L3RDS(ON) and to ensure minimal power loss and heat dissipation. 3Top View C
smg2314ne.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SMG2314NE 4 A, 20 V, RDS(ON) 32 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and ALconserves energy, making this device ideal for use in power
smg2318n.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SMG2318N 1.2 A, 30 V, RDS(ON) 160 m N-Channel Logic Level MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ALensure minimal power loss and heat dissipation. 33T
smg2310a.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SMG2310A N-Ch Enhancement Mode Power MOSFET 5.0 A, 60 V, RDS(ON)=115 m Elektronische Bauelemente sRoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTIONS AThe SMG2310A utilized advanced processing techniques to achieve the Llowest possible on-resistance, extremely efficient and cost-effectiveness 33device. The SMG2310A is univers
smg2310n.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SMG2310N 2.2A, 30V, RDS(ON) 65 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize High Cell ADensity process. Low RDS(on) assures minimal power loss and Lconserves energy, making this device ideal for use in power 33
smg2319p.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SMG2319P -2.1A , -30V , RDS(ON) 200 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 The miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal ALpower loss and conserves energy, making this 33device ideal for use in power m
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .