SMG2314N MOSFET Datasheet: N-Ch, 20V, 5.3A. Full specification with pinout and replacement list

SMG2314N Specs and Replacement

   Type Designator: SMG2314N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 24 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: SC59

SMG2314N substitution

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SMG2314N datasheet

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SMG2314N 5.3A , 20V , RDS(ON) 32 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs A utilize a high cell density trench process to provide low L 3 RDS(ON) and to ensure minimal power loss and heat dissipation. 3 Top View C ... See More ⇒

0.1. Size:139K secos
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SMG2314NE 4 A, 20 V, RDS(ON) 32 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and A L conserves energy, making this device ideal for use in power ... See More ⇒

8.1. Size:469K secos
smg2318n.pdf pdf_icon

SMG2318N 1.2 A, 30 V, RDS(ON) 160 m N-Channel Logic Level MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to A L ensure minimal power loss and heat dissipation. 3 3 T... See More ⇒

8.2. Size:900K secos
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SMG2310A N-Ch Enhancement Mode Power MOSFET 5.0 A, 60 V, RDS(ON)=115 m Elektronische Bauelemente sRoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTIONS A The SMG2310A utilized advanced processing techniques to achieve the L lowest possible on-resistance, extremely efficient and cost-effectiveness 3 3 device. The SMG2310A is univers... See More ⇒