SMG3403 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SMG3403
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.38 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 91 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
Paquete / Cubierta: SC59
Búsqueda de reemplazo de SMG3403 MOSFET
SMG3403 Datasheet (PDF)
smg3403.pdf

SMG3403-3.7A, -30V,RDS(ON) 75m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductASC-59DescriptionLDim Min MaxThe SMG3403 provide the designer with the best 3A 2.70 3.10SBTop Viewcombination of fast switching, low on-resistance 2 1B 1.40 1.60and cost-effectiveness. C 1.00 1.30The SMG3403 is universally preferred f
smg3400.pdf

SMG34005.8A, 30V,RDS(ON) 28mElektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductSC-59ADim Min MaxDescription LA 2.70 3.10The SMG3400 uses advanced trench technology to provide*3B 1.40 1.60SBTop Viewexcellent on-resistance extremely efficient and 2 1C 1.00 1.30cost-effectiveness device.D 0.35 0.50The SMG3400 is uni
smg3401.pdf

SMG3401-4.2A, -30V,RDS(ON) 50m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FETA suffix of "-C" specifies halogen & lead-freeASC-59DescriptionLDim Min MaxThe SMG3401 uses advanced trench technology 3A 2.70 3.10SBTop Viewto provide excellent on-resistance extremely 2 1B 1.40 1.60efficient and cost-effectiveness device. C 1.00 1.30The
smg3407.pdf

SMG3407-4.1A, -30V,RDS(ON) 52m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductASC-59DescriptionLDim Min MaxThe SMG3407 uses advanced trench technology to 3A 2.70 3.10SBTop Viewprovide excellent on-resistance with low gate change. 2 1B 1.40 1.60The device is suitable for use as a load switch or inC 1.00 1.30PWM
Otros transistores... SMG2371P , SMG2390N , SMG2391P , SMG2398N , SMG2398NE , SMG3400 , SMG3401 , SMG3402 , 20N50 , SMG3407 , SMG5403 , SMG5406 , SMG5409 , SMS318 , SMS4003K , SMS840 , SSD02N65 .
History: SI6821DQ | TPC6109-H | IRFR024A | SWF4N80K | SRT20N090HS2 | KNH3208A
History: SI6821DQ | TPC6109-H | IRFR024A | SWF4N80K | SRT20N090HS2 | KNH3208A



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