SMG3403 MOSFET Datasheet: P-Ch, 30V, 3.7A. Full specification with pinout and replacement list

SMG3403 Specs and Replacement

Type Designator: SMG3403

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 91 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: SC59

SMG3403 substitution

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SMG3403 datasheet

..1. Size:407K secos
smg3403.pdf pdf_icon

SMG3403 -3.7A, -30V,RDS(ON) 75m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A SC-59 Description L Dim Min Max The SMG3403 provide the designer with the best 3 A 2.70 3.10 S B Top View combination of fast switching, low on-resistance 2 1 B 1.40 1.60 and cost-effectiveness. C 1.00 1.30 The SMG3403 is universally preferred f... See More ⇒

8.1. Size:416K secos
smg3400.pdf pdf_icon

SMG3400 5.8A, 30V,RDS(ON) 28m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SC-59 A Dim Min Max Description L A 2.70 3.10 The SMG3400 uses advanced trench technology to provide * 3 B 1.40 1.60 S B Top View excellent on-resistance extremely efficient and 2 1 C 1.00 1.30 cost-effectiveness device. D 0.35 0.50 The SMG3400 is uni... See More ⇒

8.2. Size:515K secos
smg3401.pdf pdf_icon

SMG3401 -4.2A, -30V,RDS(ON) 50m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET A suffix of "-C" specifies halogen & lead-free A SC-59 Description L Dim Min Max The SMG3401 uses advanced trench technology 3 A 2.70 3.10 S B Top View to provide excellent on-resistance extremely 2 1 B 1.40 1.60 efficient and cost-effectiveness device. C 1.00 1.30 The ... See More ⇒

8.3. Size:512K secos
smg3407.pdf pdf_icon

SMG3407 -4.1A, -30V,RDS(ON) 52m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A SC-59 Description L Dim Min Max The SMG3407 uses advanced trench technology to 3 A 2.70 3.10 S B Top View provide excellent on-resistance with low gate change. 2 1 B 1.40 1.60 The device is suitable for use as a load switch or in C 1.00 1.30 PWM ... See More ⇒