SSE90N10-14 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSE90N10-14
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 300 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 90 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
Carga de la puerta (Qg): 60 nC
Tiempo de subida (tr): 49 nS
Conductancia de drenaje-sustrato (Cd): 392 pF
Resistencia entre drenaje y fuente RDS(on): 0.016 Ohm
Paquete / Cubierta: TO220
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SSE90N10-14 Datasheet (PDF)
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sse90n04-03p.pdf
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SSE90N06-10P 90A , 60V , RDS(ON) 9.9 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free TO-220P DESCRIPTION These miniature surface mount MOSFETs utilize a DHigh Cell Density trench process to provide low RDS(on) Cand to ensure minimal power loss and heat dissipation. BRTA
sse90n08-08.pdf
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SSE90N08-08 90A , 80V , RDS(ON) 11m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free TO-220P FEATURES D Low RDS(on) trench technology. C Low thermal impedance BR Fast Switch Speed. TAE SGF IAPPLICATIONS H White LED boost converters JKL Auto
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