SSE90N10-14 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SSE90N10-14
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 49 nS
   Cossⓘ - Capacitancia de salida: 392 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: TO220

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SSE90N10-14 Datasheet (PDF)

..1. Size:559K secos
sse90n10-14.pdf

SSE90N10-14 90A , 100V , RDS(ON) 16m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free TO-220P DESCRIPTION D These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) Cand to ensure minimal power loss and heat dissipation. BR TA

8.1. Size:163K secos
sse90n06-30p.pdf

SSE90N06-30P N-Channel Enhancement Mode Mos.FET 87 A, 60 V, RDS(ON) 26.5 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free TO-220P DESCRIPTION D These miniature surface mount MOSFETs utilize High Cell Density trench process to provide low RDS(on) and to ensure minimal power loss C and heat dissipation. Typical ap

8.2. Size:674K secos
sse90n04-03p.pdf

SSE90N04-03P 90A , 40V , RDS(ON) 5 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TO-220P These miniature surface mount MOSFETs utilize a B Nhigh cell density trench process to provide low RDS(on) Dand to ensure minimal power loss and heat dissipation. EFEATURES

8.3. Size:611K secos
sse90n06-10p.pdf

SSE90N06-10P 90A , 60V , RDS(ON) 9.9 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free TO-220P DESCRIPTION These miniature surface mount MOSFETs utilize a DHigh Cell Density trench process to provide low RDS(on) Cand to ensure minimal power loss and heat dissipation. BRTA

8.4. Size:1955K secos
sse90n08-08.pdf

SSE90N08-08 90A , 80V , RDS(ON) 11m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free TO-220P FEATURES D Low RDS(on) trench technology. C Low thermal impedance BR Fast Switch Speed. TAE SGF IAPPLICATIONS H White LED boost converters JKL Auto

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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