SSE90N10-14 - Даташиты. Аналоги. Основные параметры

SSE90N10-14 90A , 100V , RDS(ON) 16m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free TO-220P DESCRIPTION D These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) Cand to ensure minimal power loss and heat dissipation. BR TA

SSE90N06-30P N-Channel Enhancement Mode Mos.FET 87 A, 60 V, RDS(ON) 26.5 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free TO-220P DESCRIPTION D These miniature surface mount MOSFETs utilize High Cell Density trench process to provide low RDS(on) and to ensure minimal power loss C and heat dissipation. Typical ap

SSE90N04-03P 90A , 40V , RDS(ON) 5 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TO-220P These miniature surface mount MOSFETs utilize a B Nhigh cell density trench process to provide low RDS(on) Dand to ensure minimal power loss and heat dissipation. EFEATURES

SSE90N06-10P 90A , 60V , RDS(ON) 9.9 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free TO-220P DESCRIPTION These miniature surface mount MOSFETs utilize a DHigh Cell Density trench process to provide low RDS(on) Cand to ensure minimal power loss and heat dissipation. BRTA

SSE90N08-08 90A , 80V , RDS(ON) 11m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free TO-220P FEATURES D Low RDS(on) trench technology. C Low thermal impedance BR Fast Switch Speed. TAE SGF IAPPLICATIONS H White LED boost converters JKL Auto