SSE90N10-14 - Даташиты. Аналоги. Основные параметры
Наименование производителя: SSE90N10-14
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 90 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 49 ns
Cossⓘ - Выходная емкость: 392 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
Тип корпуса: TO220
Аналог (замена) для SSE90N10-14
SSE90N10-14 Datasheet (PDF)
sse90n10-14.pdf

SSE90N10-14 90A , 100V , RDS(ON) 16m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free TO-220P DESCRIPTION D These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) Cand to ensure minimal power loss and heat dissipation. BR TA
sse90n06-30p.pdf

SSE90N06-30P N-Channel Enhancement Mode Mos.FET 87 A, 60 V, RDS(ON) 26.5 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free TO-220P DESCRIPTION D These miniature surface mount MOSFETs utilize High Cell Density trench process to provide low RDS(on) and to ensure minimal power loss C and heat dissipation. Typical ap
sse90n04-03p.pdf

SSE90N04-03P 90A , 40V , RDS(ON) 5 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TO-220P These miniature surface mount MOSFETs utilize a B Nhigh cell density trench process to provide low RDS(on) Dand to ensure minimal power loss and heat dissipation. EFEATURES
sse90n06-10p.pdf

SSE90N06-10P 90A , 60V , RDS(ON) 9.9 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free TO-220P DESCRIPTION These miniature surface mount MOSFETs utilize a DHigh Cell Density trench process to provide low RDS(on) Cand to ensure minimal power loss and heat dissipation. BRTA
Другие MOSFET... SSD9973 , SSDF9504 , SSE110N03-03P , SSE70N10-44P , SSE90N04-03P , SSE90N06-10P , SSE90N06-30P , SSE90N08-08 , IRF3205 , SSE90P06-08P , SSF1320N , SSF1321P , SSF1331P , SSF7400 , SSF7401 , SSF84W , SSG0410 .
History: WMJ26N65C4 | JMSL0406AGQ | 2SK1399 | BSP75G | 2SK1494-Z | IRF734PBF | HM2310B
History: WMJ26N65C4 | JMSL0406AGQ | 2SK1399 | BSP75G | 2SK1494-Z | IRF734PBF | HM2310B



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