SSM452 Todos los transistores

 ..1. Size:609K  secos
 ssm452.pdf

SSM452 -6 A, -30V, RDS(ON) 55m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free DESCRIPTION The SSM452 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. FEATURES SOT-223 Simple Drive Requirement Lower On-resistanc

 9.1. Size:209K  silicon standard
 ssm4500gm.pdf

SSM4500GM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 20V D2 D2 Simple Drive Requirement RDS(ON) 30m D1 D1 Low On-resistance ID 6A Fast Switching G2 P-CH BVDSS -20V S2 G1 SO-8 S1 RDS(ON) 50m DESCRIPTION ID -5A The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, rug

 9.2. Size:305K  silicon standard
 ssm4502gm.pdf

SSM4502GM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2 N-CH BVDSS 20V D2 Simple Drive Requirement D1 RDS(ON) 18m D1 Low Gate Charge ID 8.3A Fast Switching Performance G2 S2 P-CH BVDSS -20V G1 S1 SO-8 RDS(ON) 45m DESCRIPTION ID -5A The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switchin

 9.3. Size:293K  silicon standard
 ssm4501gm.pdf

SSM4501GM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 30V D2 Simple Drive Requirement D2 RDS(ON) 28m D1 Low On-resistance D1 ID 7A Fast Switching G2 P-CH BVDSS -30V S2 G1 SO-8 RDS(ON) 50m S1 DESCRIPTION ID -5.3A The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching,

 9.4. Size:249K  silicon standard
 ssm4501gsd.pdf

SSM4501GSD N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 30V D2 D2 D1 RDS(ON) 27m Simple Drive Requirement D1 Low On-resistance ID 7A Fast Switching Characteristic P-CH BVDSS -30V G2 S2 RDS(ON) 49m PDIP-8 G1 S1 DESCRIPTION ID -5A The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of

 9.5. Size:314K  silicon standard
 ssm4575m.pdf

SSM4575M COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement N-Ch BV 60V D2 DSS D2 Low on-resistance D1 R 36m DS(ON) D1 Fast switching performance I 6A D G2 P-Ch BV -60V S2 DSS G1 SO-8 S1 RDS(ON) 72m Description ID -4.2A Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, D2 D1 rugge

 9.6. Size:337K  silicon standard
 ssm4513m.pdf

SSM4513M/GM N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement N-CH BV 35V D2 DSS D2 Low on-resistance R 36m D1 DS(ON) D1 Fast switching performance ID 5.8A G2 P-CH BVDSS -35V S2 G1 SO-8 S1 RDS(ON) 68m Description ID -4.3A Advanced Power MOSFETs from Silicon Standard provide the D2 D1 designer with the best combination of fast switching, rugge

 9.7. Size:425K  silicon standard
 ssm4509m.pdf

SSM4509GM N- AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS N-CH BVDSS 30V Simple drive requirement D2 D2 D2 RDS(ON) 14m Low on-resistance D1 D1 D1 D1 ID 10A Fast switching characteristic G2 G2 P-CH BVDSS -30V S2 S2 G1 SO-8 S1G1 RDS(ON) 20m S1 Description ID -8.4A Advanced Power MOSFETs from Silicon Standard provide the D2 D1 designer with the best combination

 9.8. Size:232K  silicon standard
 ssm4507gm.pdf

SSM4507GM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 30V D2 D2 Simple Drive Requirement D2 RDS(ON) 36m D2 D1 D1 Low On-resistance D1 D1 ID 6.0A Fast Switching Performance G2 G2 P-CH BVDSS -30V S2 G1 S2 SO-8 S1 G1 RDS(ON) 72m SO-8 S1 DESCRIPTION ID -4.2A The advanced power MOSFETs from Silicon Standard Corp. provide the designer w

 9.9. Size:447K  silicon standard
 ssm4565m.pdf

SSM4565M/GM COMPLEMENTARY N- AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS N-CH BVDSS 40V Simple drive requirement D2 D2 D2 RDS(ON) 25m Lower gate charge D1 D1 D1 D1 ID 7.6A Fast switching characteristic G2 G2 P-CH BVDSS -40V S2 S2 G1 SO-8 S1G1 RDS(ON) 33m S1 Description ID -6.5A Advanced Power MOSFETs from Silicon Standard provide the D2 D1 designer with the

 9.10. Size:288K  silicon standard
 ssm4532gm.pdf

SSM4532GM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 30V D2 D2 Simple Drive Requirement RDS(ON) 50m D1 D1 Low On-resistance ID 5A Fast Switching G2 P-CH BVDSS -30V S2 G1 SO-8 S1 RDS(ON) 70m DESCRIPTION ID -4A The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching,