SSM452 Specs and Replacement

Type Designator: SSM452

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 222 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: SOT223

SSM452 substitution

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SSM452 datasheet

 ..1. Size:609K  secos
ssm452.pdf pdf_icon

SSM452

SSM452 -6 A, -30V, RDS(ON) 55m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free DESCRIPTION The SSM452 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. FEATURES SOT-223 Simple Drive Requirement Lower On-resistanc... See More ⇒

 9.1. Size:209K  silicon standard
ssm4500gm.pdf pdf_icon

SSM452

SSM4500GM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 20V D2 D2 Simple Drive Requirement RDS(ON) 30m D1 D1 Low On-resistance ID 6A Fast Switching G2 P-CH BVDSS -20V S2 G1 SO-8 S1 RDS(ON) 50m DESCRIPTION ID -5A The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, rug... See More ⇒

 9.2. Size:305K  silicon standard
ssm4502gm.pdf pdf_icon

SSM452

SSM4502GM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2 N-CH BVDSS 20V D2 Simple Drive Requirement D1 RDS(ON) 18m D1 Low Gate Charge ID 8.3A Fast Switching Performance G2 S2 P-CH BVDSS -20V G1 S1 SO-8 RDS(ON) 45m DESCRIPTION ID -5A The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switchin... See More ⇒

 9.3. Size:293K  silicon standard
ssm4501gm.pdf pdf_icon

SSM452

SSM4501GM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 30V D2 Simple Drive Requirement D2 RDS(ON) 28m D1 Low On-resistance D1 ID 7A Fast Switching G2 P-CH BVDSS -30V S2 G1 SO-8 RDS(ON) 50m S1 DESCRIPTION ID -5.3A The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ... See More ⇒

Detailed specifications: SSG6680, SSG9435, SSG9435BDY, SSG9435P, SSG9475, SSG9575, SSK3018K, SSM0410, 2N60, SSM9971, SSN3541, SSP7150N, SSP7200N, SSP7300N, SSP7411P, SSP7421P, SSP7430N

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