SSM452 -6 A, -30V, RDS(ON) 55m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free DESCRIPTION The SSM452 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. FEATURES SOT-223 Simple Drive Requirement Lower On-resistanc

SSM4500GMN AND P-CHANNEL ENHANCEMENTMODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 20VD2D2Simple Drive Requirement RDS(ON) 30mD1D1Low On-resistance ID 6AFast SwitchingG2P-CH BVDSS -20VS2G1SO-8S1RDS(ON) 50mDESCRIPTION ID -5AThe advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, rug

SSM4502GMN AND P-CHANNEL ENHANCEMENTMODE POWER MOSFET PRODUCT SUMMARY D2 N-CH BVDSS 20VD2Simple Drive Requirement D1 RDS(ON) 18mD1Low Gate ChargeID 8.3AFast Switching Performance G2S2P-CH BVDSS -20VG1S1SO-8RDS(ON) 45mDESCRIPTION ID -5AThe advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switchin

SSM4501GMN AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 30VD2Simple Drive Requirement D2RDS(ON) 28mD1Low On-resistance D1ID 7AFast Switching G2P-CH BVDSS -30VS2G1SO-8RDS(ON) 50mS1DESCRIPTION ID -5.3AThe advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching,

SSM4501GSDN AND P-CHANNEL ENHANCEMENTMODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 30VD2D2D1RDS(ON) 27mSimple Drive Requirement D1Low On-resistance ID 7AFast Switching Characteristic P-CH BVDSS -30VG2S2RDS(ON) 49mPDIP-8G1S1DESCRIPTION ID -5AThe advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of

SSM4575MCOMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETSSimple drive requirement N-Ch BV 60VD2 DSSD2Low on-resistance D1 R 36mDS(ON)D1Fast switching performance I 6ADG2P-Ch BV -60VS2DSS G1SO-8 S1RDS(ON) 72mDescription ID -4.2APower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,D2D1rugge

SSM4513M/GMN AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETSSimple drive requirement N-CH BV 35VD2 DSSD2Low on-resistance R 36mD1DS(ON)D1Fast switching performance ID 5.8AG2P-CH BVDSS -35VS2 G1SO-8 S1RDS(ON) 68mDescription ID -4.3AAdvanced Power MOSFETs from Silicon Standard provide theD2D1designer with the best combination of fast switching, rugge

SSM4509GMN- AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETSN-CH BVDSS 30VSimple drive requirement D2D2D2 RDS(ON) 14mLow on-resistance D1D1D1D1ID 10AFast switching characteristicG2G2P-CH BVDSS -30VS2S2 G1SO-8 S1G1RDS(ON) 20mS1 DescriptionID -8.4AAdvanced Power MOSFETs from Silicon Standard provide theD2D1designer with the best combination

SSM4507GMN AND P-CHANNEL ENHANCEMENTMODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 30VD2D2Simple Drive Requirement D2RDS(ON) 36mD2D1D1Low On-resistance D1D1ID 6.0AFast Switching Performance G2G2 P-CH BVDSS -30VS2G1 S2SO-8 S1 G1 RDS(ON) 72mSO-8 S1DESCRIPTION ID -4.2AThe advanced power MOSFETs from Silicon Standard Corp. provide the designer w

SSM4565M/GMCOMPLEMENTARY N- AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETSN-CH BVDSS 40VSimple drive requirement D2D2D2 RDS(ON) 25mLower gate charge D1D1D1D1ID 7.6AFast switching characteristicG2G2P-CH BVDSS -40VS2S2 G1SO-8 S1G1RDS(ON) 33mS1 DescriptionID -6.5AAdvanced Power MOSFETs from Silicon Standard provide theD2D1designer with the

SSM4532GMN AND P-CHANNEL ENHANCEMENT MODE POWER MOSFETPRODUCT SUMMARY N-CH BVDSS 30VD2D2Simple Drive Requirement RDS(ON) 50mD1D1Low On-resistance ID 5AFast Switching G2P-CH BVDSS -30VS2G1SO-8S1RDS(ON) 70mDESCRIPTION ID -4AThe advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching,