2N60I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N60I
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 34 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 30 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
Paquete / Cubierta: TO251
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2N60I Datasheet (PDF)
2n60p 2n60f 2n60i 2n60d.pdf

2N60Surface Mount N-Channel Power MOSFETDRAIN CURRENTP b Lead(Pb)-Free2 AMPERESDRAIN SOURCE VOLTAGEDescription:600 VOLTAGEThis advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for high efficiency switche
ap02n60i.pdf

AP02N60IRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching RDS(ON) 8 Simple Drive Requirement ID 2AGSDescriptionThe TO-220CFM package is widely preferred for all commercial-industrial applications. The device is suited for switch mode powersupplies ,AC-DC converters and
ap02n60i-a.pdf

AP02N60I-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 8 Simple Drive Requirement ID 2AG RoHS Compliant & Halogen-FreeSDescriptionAP02N60 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest
ap02n60i-a-hf.pdf

AP02N60I-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 8 Simple Drive Requirement ID 2AG RoHS Compliant & Halogen-FreeSDescriptionThe TO-220CFM package is widely preferred for all commercial-industrial applications. The device is suited
Otros transistores... SGM0410 , SSD04N65 , SSD20N10-130D , SSM9575 , SST3585 , 2N4003K , 2N60D , 2N60F , IRLZ44N , 2N60P , 2N7002KT , 2SK3018W , 2SK3019T , 2SK3541M , 4N60D , 4N60F , 4N60I .
History: SSG5509A | IPL60R085P7 | FS18SM-10 | IXFA10N80P | FQB46N15 | BLV4N60 | WNM2020-3
History: SSG5509A | IPL60R085P7 | FS18SM-10 | IXFA10N80P | FQB46N15 | BLV4N60 | WNM2020-3



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