2N60I Todos los transistores

 ..1. Size:782K  wietron
 2n60p 2n60f 2n60i 2n60d.pdf

2N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead(Pb)-Free 2 AMPERES DRAIN SOURCE VOLTAGE Description 600 VOLTAGE This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switche

 0.1. Size:108K  ape
 ap02n60i.pdf

AP02N60I RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching RDS(ON) 8 Simple Drive Requirement ID 2A G S Description The TO-220CFM package is widely preferred for all commercial- industrial applications. The device is suited for switch mode power supplies ,AC-DC converters and

 0.2. Size:175K  ape
 ap02n60i-a.pdf

AP02N60I-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 8 Simple Drive Requirement ID 2A G RoHS Compliant & Halogen-Free S Description AP02N60 series are from Advanced Power innovated design and silicon process technology to achieve the lowest

 0.3. Size:56K  ape
 ap02n60i-a-hf.pdf

AP02N60I-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 8 Simple Drive Requirement ID 2A G RoHS Compliant & Halogen-Free S Description The TO-220CFM package is widely preferred for all commercial- industrial applications. The device is suited

 0.4. Size:337K  cystek
 mtn2n60i3.pdf

Spec. No. C435I3 Issued Date 2009.01.20 CYStech Electronics Corp. Revised Date 2011.11.10 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 4.0 (typ.) MTN2N60I3 ID 2A Description The MTN2N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-res

 0.5. Size:786K  lrc
 l2n60d l2n60f l2n60i l2n60p.pdf

LESHAN RADIO COMPANY, LTD. L2N60 600V N-Channel MOSFET 2 DESCRIPTION 1 3

 0.6. Size:269K  foshan
 cs2n60i.pdf

BRI2N60(CS2N60I) N-CHANNEL MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. , , Features Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25