2N60I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2N60I
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 34 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 9.3 nC
   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 30 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
   Paquete / Cubierta: TO251

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2N60I Datasheet (PDF)

..1. Size:782K wietron
2n60p 2n60f 2n60i 2n60d.pdf

2N60Surface Mount N-Channel Power MOSFETDRAIN CURRENTP b Lead(Pb)-Free2 AMPERESDRAIN SOURCE VOLTAGEDescription:600 VOLTAGEThis advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for high efficiency switche

0.1. Size:108K ape
ap02n60i.pdf

AP02N60IRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching RDS(ON) 8 Simple Drive Requirement ID 2AGSDescriptionThe TO-220CFM package is widely preferred for all commercial-industrial applications. The device is suited for switch mode powersupplies ,AC-DC converters and

0.2. Size:175K ape
ap02n60i-a.pdf

AP02N60I-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 8 Simple Drive Requirement ID 2AG RoHS Compliant & Halogen-FreeSDescriptionAP02N60 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest

0.3. Size:56K ape
ap02n60i-a-hf.pdf

AP02N60I-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 8 Simple Drive Requirement ID 2AG RoHS Compliant & Halogen-FreeSDescriptionThe TO-220CFM package is widely preferred for all commercial-industrial applications. The device is suited

0.4. Size:337K cystek
mtn2n60i3.pdf

Spec. No. : C435I3 Issued Date : 2009.01.20 CYStech Electronics Corp.Revised Date :2011.11.10 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 4.0(typ.) MTN2N60I3 ID : 2A Description The MTN2N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-res

0.5. Size:786K lrc
l2n60d l2n60f l2n60i l2n60p.pdf

LESHAN RADIO COMPANY, LTD.L2N60600V N-Channel MOSFET 2 DESCRIPTION 1 3

0.6. Size:269K foshan
cs2n60i.pdf

BRI2N60(CS2N60I) N-CHANNEL MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25

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