2N60I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N60I
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 34 W
Tensión drenaje-fuente (Vds): 600 V
Tensión compuerta-fuente (Vgs): 30 V
Corriente continua de drenaje (Id): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de elevación (tr): 12 nS
Conductancia de drenaje-sustrato (Cd): 30 pF
Resistencia drenaje-fuente RDS(on): 5 Ohm
Empaquetado / Estuche: TO251
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2N60I Datasheet (PDF)
1.1. l2n60d l2n60f l2n60i l2n60p.pdf 
Size:786K _update_mosfet
LESHAN RADIO COMPANY, LTD. L2N60 600V N-Channel MOSFET 2 DESCRIPTION 1 3
1.2. cs2n60i.pdf Size:269K _update_mosfet
BRI2N60(CS2N60I) N-CHANNEL MOSFET/N 沟道 MOS 晶体管 用途: 用于高功率 DC/DC 转换和功率开关。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. 特点: 低栅电荷,低反馈电容,开关速度快。 Features: Low gate charge, low crss, fast switching. 极限参数/Absolute maximum ratings(Ta=25℃
1.3. 2n60p 2n60f 2n60i 2n60d.pdf Size:782K _wietron
2N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead(Pb)-Free 2 AMPERES DRAIN SOURCE VOLTAGE Description: 600 VOLTAGE This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched m
1.4. ap02n60i-a-hf.pdf Size:56K _a-power
AP02N60I-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test BVDSS 650V D Ў Fast Switching Characteristic RDS(ON) 8? Ў Simple Drive Requirement ID 2A G Ў RoHS Compliant & Halogen-Free S Description The TO-220CFM package is widely preferred for all commercial- industrial applications. The device is suited for swit
1.5. ap02n60i-a.pdf Size:175K _a-power
AP02N60I-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 650V D ▼ Fast Switching Characteristic RDS(ON) 8Ω ▼ Simple Drive Requirement ID 2A G ▼ RoHS Compliant & Halogen-Free S Description AP02N60 series are from Advanced Power innovated design and silicon process technology to achieve the lowest
1.6. ap02n60i.pdf Size:108K _a-power
AP02N60I RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test BVDSS 600V D Ў Fast Switching RDS(ON) 8? Ў Simple Drive Requirement ID 2A G S Description The TO-220CFM package is widely preferred for all commercial- industrial applications. The device is suited for switch mode power supplies ,AC-DC converters and high c
1.7. mtn2n60i3.pdf Size:337K _cystek
Spec. No. : C435I3 Issued Date : 2009.01.20 CYStech Electronics Corp. Revised Date :2011.11.10 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDS(ON) : 4.0Ω(typ.) MTN2N60I3 ID : 2A Description The MTN2N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-res
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