2N60I PDF and Equivalents Search

 

2N60I Specs and Replacement

Type Designator: 2N60I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: TO251

2N60I substitution

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2N60I datasheet

 ..1. Size:782K  wietron
2n60p 2n60f 2n60i 2n60d.pdf pdf_icon

2N60I

2N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead(Pb)-Free 2 AMPERES DRAIN SOURCE VOLTAGE Description 600 VOLTAGE This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switche... See More ⇒

 0.1. Size:108K  ape
ap02n60i.pdf pdf_icon

2N60I

AP02N60I RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching RDS(ON) 8 Simple Drive Requirement ID 2A G S Description The TO-220CFM package is widely preferred for all commercial- industrial applications. The device is suited for switch mode power supplies ,AC-DC converters and... See More ⇒

 0.2. Size:175K  ape
ap02n60i-a.pdf pdf_icon

2N60I

AP02N60I-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 8 Simple Drive Requirement ID 2A G RoHS Compliant & Halogen-Free S Description AP02N60 series are from Advanced Power innovated design and silicon process technology to achieve the lowest... See More ⇒

 0.3. Size:56K  ape
ap02n60i-a-hf.pdf pdf_icon

2N60I

AP02N60I-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 8 Simple Drive Requirement ID 2A G RoHS Compliant & Halogen-Free S Description The TO-220CFM package is widely preferred for all commercial- industrial applications. The device is suited ... See More ⇒

Detailed specifications: SGM0410, SSD04N65, SSD20N10-130D, SSM9575, SST3585, 2N4003K, 2N60D, 2N60F, AON6380, 2N60P, 2N7002KT, 2SK3018W, 2SK3019T, 2SK3541M, 4N60D, 4N60F, 4N60I

Keywords - 2N60I MOSFET specs

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