Справочник MOSFET. 2N60I

 

2N60I Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: 2N60I
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 34 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 30 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 5 Ohm
   Тип корпуса: TO251
 

 Аналог (замена) для 2N60I

   - подбор ⓘ MOSFET транзистора по параметрам

 

2N60I Datasheet (PDF)

 ..1. Size:782K  wietron
2n60p 2n60f 2n60i 2n60d.pdfpdf_icon

2N60I

2N60Surface Mount N-Channel Power MOSFETDRAIN CURRENTP b Lead(Pb)-Free2 AMPERESDRAIN SOURCE VOLTAGEDescription:600 VOLTAGEThis advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for high efficiency switche

 0.1. Size:108K  ape
ap02n60i.pdfpdf_icon

2N60I

AP02N60IRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching RDS(ON) 8 Simple Drive Requirement ID 2AGSDescriptionThe TO-220CFM package is widely preferred for all commercial-industrial applications. The device is suited for switch mode powersupplies ,AC-DC converters and

 0.2. Size:175K  ape
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2N60I

AP02N60I-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 8 Simple Drive Requirement ID 2AG RoHS Compliant & Halogen-FreeSDescriptionAP02N60 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest

 0.3. Size:56K  ape
ap02n60i-a-hf.pdfpdf_icon

2N60I

AP02N60I-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 8 Simple Drive Requirement ID 2AG RoHS Compliant & Halogen-FreeSDescriptionThe TO-220CFM package is widely preferred for all commercial-industrial applications. The device is suited

Другие MOSFET... SGM0410 , SSD04N65 , SSD20N10-130D , SSM9575 , SST3585 , 2N4003K , 2N60D , 2N60F , IRLZ44N , 2N60P , 2N7002KT , 2SK3018W , 2SK3019T , 2SK3541M , 4N60D , 4N60F , 4N60I .

History: CS12N06AE-G | TMU4N60H | NCE035N30G

 

 
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